BFR 360F E6327

Overview

The BFR 360F E6327 is an NPN silicon RF bipolar transistor from Infineon Technologies, designed for low-noise amplifier applications. It operates with a collector-emitter voltage of 6 V and supports frequencies up to 3.5 GHz. Key electrical parameters include a minimum noise figure of 1 dB at 1.8 GHz, a transition frequency of 14 GHz, and a maximum available power gain of 15.5 dB at 1.8 GHz. The device features a TSFP-3 surface-mount package, handles a continuous collector current of 35 mA, and dissipates up to 210 mW. It is qualified according to AEC-Q101 standards.

Feature Summary

• Low noise figure of 1.0 dB at 1.8 GHz suitable for sensitive receiver front-ends
• Collector design optimized for 5V supply voltage operation
• Qualified for automotive applications under AEC-Q101 standards

Applications

• Low noise amplifiers for FM and AM radio receivers
• Oscillators operating up to 3.5 GHz
• Sub-1 GHz ISM band applications

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and check for any active lifecycle notices or obsolescence warnings before finalizing procurement plans.

Selection Notes

Select this component for designs requiring low noise performance in low-current environments. Ensure the circuit provides adequate thermal management, as total power dissipation is limited to 210 mW. Verify that the required operating frequency does not exceed the 3.5 GHz limit for optimal stability.

Part Context

This part belongs to the BFR360 series of low-profile silicon NPN RF transistors. It is characterized by low current and low voltage capabilities, making it cost-effective for general-purpose RF amplification tasks where high linearity and low noise are prioritized over high power output.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Generic replacements may differ in noise figure or transition frequency; verify compatibility with existing bias networks and impedance matching circuits.