BFR 705L3RH E6327

Overview

The BFR 705L3RH E6327 is an NPN Silicon Germanium RF transistor designed for low current operation and ultra-low noise applications. It features a maximum collector-emitter voltage of 4 V, a collector current limit of 10 mA, and a total power dissipation of 40 mW. The device operates within a temperature range of -65 °C to +150 °C and utilizes a TSLP-3-9 leadless package with a maximum height of 0.32 mm. Key electrical characteristics include a transition frequency (fT) of 39 GHz at 7 mA, a minimum DC current gain (hFE) of 160, and a noise figure of 0.5 dB at 1.8 GHz.

Feature Summary

• High gain ultra low noise RF transistor optimized for low current operation
• Ideal for low power consumption LNA design in wireless applications up to 10 GHz
• Outstanding noise figure performance at 1.8 GHz and 6 GHz
• Extremely small and flat leadless package with AEC Q101 qualification

Applications

• Low noise amplifier (LNA) design
• Wireless communication systems operating up to 10 GHz
• Low power consumption RF circuits

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and compliance status. Confirm availability through authorized distributors as standard stock levels may vary. Ensure handling precautions are observed due to electrostatic discharge sensitivity. Check for any end-of-life notifications or alternative part recommendations from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component for designs requiring high gain and ultra-low noise figures at low bias currents. The 150 GHz fT technology supports frequencies well beyond the 10 GHz operational limit. Consider the TSLP-3-9 package dimensions for board space constraints. Verify thermal management requirements given the 40 mW power dissipation limit and junction-to-soldering point thermal resistance.

Part Context

This component belongs to the BFR705L3 series of NPN Silicon Germanium RF transistors manufactured by Infineon Technologies. It is specifically engineered for high-frequency applications where low noise and high gain are critical. The device is qualified according to AEC Q101 standards, indicating suitability for automotive or high-reliability environments.

Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. No public confirmed substitutes are listed in the provided datasheet.