BFR106E6327HTSA1

Overview

The BFR106E6327HTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It operates in the UHF/VHF bands with a collector-emitter breakdown voltage of 15 V and a maximum collector current of 210 mA. The device delivers a typical transition frequency (fT) of 5 GHz at 8 V and 70 mA, supporting high linearity applications. Key performance metrics include a 22 dBm OP1dB and 31 dBm OIP3 at 900 MHz. It features a minimum noise figure of 1.8 dB at 900 MHz and 3 dB at 1.8 GHz. Packaged in an SOT-23-3 housing, it supports a total power dissipation of up to 700 mW.

Feature Summary

• High linearity design optimized for low noise RF applications
• Collector architecture compatible with 5 V supply voltages
• Qualified according to AEC-Q101 automotive standards

Applications

• Driver stages for multistage amplifiers
• Linear broadband amplifiers
• Antenna amplifiers

Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance and AEC-Q101 qualification status prior to integration. Review datasheet specifications for thermal resistance and ESD sensitivity requirements during handling and assembly processes.

Selection Notes

Select this component for designs requiring high linearity and low noise figures in UHF/VHF ranges. Ensure biasing conditions match the specified 8 V and 70 mA operating points for optimal fT and gain performance. Consider thermal management capabilities given the 700 mW power dissipation limit in the SOT-23 package.

Part Context

This part belongs to the BFR106 series of low noise silicon bipolar RF transistors. It is designed specifically for linear broadband and antenna amplifier applications. The device utilizes standard silicon technology housed in a compact SOT-23 package suitable for surface mount installation.

Replacement Considerations

No public confirmed substitute part numbers are available.