BFR460L3E6327XTMA1

Overview

The BFR460L3 is a low profile silicon NPN RF bipolar transistor from Infineon’s fourth-generation family, utilizing grounded emitter (SIEGET) technology. It features a transition frequency of 22 GHz and is optimized for low current and voltage operation. Key electrical parameters include a minimum noise figure of 1.1 dB at 1.8 GHz with 5 mA collector current, and a maximum power gain of 16 dB at 20 mA. The device offers an output third-order intercept point of 27 dBm and high ESD tolerance of 1.5 kV HBM. It is housed in the TSLP-3-1 package and qualified for industrial applications.

Feature Summary

• Grounded emitter architecture providing low noise performance suitable for sensitive amplifier stages
• High linearity characteristics with significant output third-order intercept point for signal integrity
• Robust electrostatic discharge protection ensuring reliability during handling and operation

Applications

• Amplifier for remote keyless entry systems
• Broadband low noise amplifiers for CATV, DVB-T, DAB/DMB, and FM/AM radio
• Low noise amplifiers for sub-1 GHz ISM band applications

Procurement Notes

Verify the specific ordering code BFR460L3E6327XTMA1 against official Infineon documentation to ensure correct package type and reel quantity. Confirm that the component meets the required industrial qualification standards, including JEDEC and AEC-Q 101 compliance, before integration into production designs.

Selection Notes

Select this component when designing circuits requiring low noise figures around 1.8 GHz with minimal power consumption. The grounded emitter structure simplifies biasing compared to other RF topologies. Ensure the design accommodates the 4.5 V collector-emitter voltage limit and utilizes the TSLP-3-1 footprint for proper thermal management.

Part Context

This part belongs to Infineon’s established fourth-generation RF bipolar transistor family. It serves as a cost-competitive solution for RF amplification tasks where ease of use and low voltage operation are prioritized. The SIEGET technology distinguishes it from traditional floating base designs by offering improved stability and simplified circuit implementation.

Replacement Considerations

No public substitute part numbers are documented in the provided datasheet. Designers should consult Infineon directly or review the broader BFR460 series documentation for potential cross-references if alternative sourcing is required.