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Product Detailed Parameters
- Description：RF TRANS NPN 12V 6GHZ SOT-23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：6GHz
- Noise Figure (dB Typ @ f)：1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
- Gain：9.5dB ~ 14.5dB
- Power - Max：300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 30mA, 8V
- Current - Collector (Ic) (Max)：90mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BFR93AE6327HTSA1 is a high-frequency NPN silicon RF transistor manufactured by Infineon Technologies. Designed for broadband applications, this component operates within the Very High Frequency (VHF) and Ultra High Frequency (UHF) ranges. It features an SOT-343 surface-mount package, providing compact integration for modern electronic designs. The device is optimized for low noise and high linearity, making it suitable for signal amplification in communication systems. Key electrical characteristics include a transition frequency supporting GHz-range operations and specific DC current gain parameters defined in official datasheets.
Feature Summary
- Optimized for low-noise amplification in VHF and UHF bands
- Compact SOT-343 surface-mount package design
- High linearity performance for signal integrity
Applications
- Wireless communication base stations
- Mobile phone front-end modules
- Broadband data transmission equipment
Procurement Notes
Verify the exact ordering code against manufacturer documentation to ensure correct suffix alignment. Confirm RoHS compliance status and tape-and-reel specifications directly with authorized distributors. Cross-reference pinout diagrams with schematic requirements before procurement to prevent assembly errors.
Selection Notes
Evaluate thermal management requirements based on the SOT-343 package limitations. Compare noise figure specifications against system sensitivity thresholds. Ensure impedance matching networks align with the transistor's optimal operating frequency range for maximum efficiency.
Part Context
This component belongs to Infineon's BFR series of RF transistors, which are widely used in consumer electronics and telecommunications infrastructure. The 'E' suffix typically denotes specific binning or testing criteria, while 'HTSA1' indicates packaging and handling specifications. It serves as a standard solution for small-signal amplification tasks requiring high frequency stability.
Replacement Considerations
Consult official substitution guides for equivalent NPN RF transistors from Infineon or other manufacturers. Verify that alternative components match the pin configuration and thermal resistance values. Ensure replacement parts meet the same voltage and current ratings to maintain circuit reliability.
