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Product Detailed Parameters
- Description：RF TRANS NPN 12V 10GHZ SOT-23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：10GHz
- Noise Figure (dB Typ @ f)：0.7dB @ 900MHz
- Gain：18dB
- Power - Max：450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 8V
- Current - Collector (Ic) (Max)：30mA
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BFU520AR is an NPN wideband silicon RF transistor designed for high-speed, low-noise applications in a plastic SOT23 surface-mounted package. It belongs to the BFU5 family and supports small signal to medium power operations up to 2 GHz. Key electrical parameters include a maximum collector-emitter voltage of 12 V (open base) or 24 V (shorted base), a continuous collector current of 30 mA, and a total power dissipation of 450 mW at a solder point temperature of 87 °C. The device features a minimum noise figure of 0.7 dB at 900 MHz and a maximum stable gain of 18 dB at the same frequency.
Feature Summary
- Low noise performance with high breakdown voltage capabilities
- Qualified for automotive applications under AEC-Q101 standards
- Utilizes 11 GHz fT silicon technology for broadband operation
Applications
- Broadband amplifiers operating up to 2 GHz
- Low noise amplifiers for ISM band applications
- ISM band oscillators
Procurement Notes
Verify the specific suffix 'R' against the official datasheet to confirm packaging orientation and reel specifications. Ensure the component meets AEC-Q101 requirements if used in automotive designs. Confirm that the SOT23 package dimensions align with the target PCB footprint before finalizing procurement.
Selection Notes
Select this component for circuits requiring high supply voltages and high breakdown characteristics within the RF spectrum. It is suitable for designs needing low noise figures around 900 MHz. Consider the 450 mW power dissipation limit and thermal resistance when designing heat management solutions for the SOT23 package.
Part Context
The BFU520A is part of the BFU5 series of NPN wideband silicon RF transistors from NXP Semiconductors. This series is engineered for small signal to medium power applications up to 2 GHz. The BFU520AR variant specifically denotes the tape and reel packaging format for automated assembly.
Replacement Considerations
BFU520A
FAQ
What is the maximum collector-emitter voltage for the BFU520A?
The maximum collector-emitter voltage is 12 V with the base open and 24 V with the base shorted.
Is the BFU520A qualified for automotive use?
Yes, the BFU520A is AEC-Q101 qualified for use in automotive applications.
What is the transition frequency of the BFU520A?
The transition frequency is typically 10 GHz under conditions of IC = 10 mA, VCE = 8 V, and f = 900 MHz.
