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Product Detailed Parameters
- Description：RF TRANS NPN 12V 11GHZ SOT-143R
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：11GHz
- Noise Figure (dB Typ @ f)：1.1dB @ 1.8GHz
- Gain：16.5dB
- Power - Max：450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 8V
- Current - Collector (Ic) (Max)：40mA
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-143R
- Supplier Device Package：SOT-143R
- Grade：-
- Qualification：-
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Overview
The BFU530XRVL is an NPN wideband silicon RF transistor designed for high-speed, low-noise applications in a plastic SOT143R package. It belongs to the BFU5 family and supports small signal to medium power operations up to 2 GHz. The device features 11 GHz fT technology, AEC-Q101 qualification, and a minimum noise figure of 0.65 dB at 900 MHz. Key electrical parameters include a collector-base voltage (VCB) of 24 V, collector-emitter voltage (VCEO) of 12 V, and maximum collector current of 40 mA. Total power dissipation reaches 450 mW with a DC current gain (hFE) ranging from 60 to 200.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- Low noise figure optimized for sensitive front-end stages
- High breakdown voltage suitable for elevated supply requirements
- Broadband performance supporting ISM band oscillators
Applications
- Broadband amplifiers operating up to 2 GHz
- Low noise amplifiers for ISM applications
- ISM band oscillators requiring high supply voltages
Procurement Notes
Verify the specific suffix 'VL' against official documentation to confirm packaging or tape-and-reel specifications. Confirm that the component status remains active or identify end-of-life notices prior to finalizing design-in decisions. Ensure compliance with automotive qualification standards if deploying in vehicle systems.
Selection Notes
Select this component when designs require high breakdown voltage combined with low noise characteristics. The SOT143R package facilitates surface-mount integration. Evaluate thermal resistance and power derating curves to ensure junction temperatures remain within safe operating limits during continuous operation.
Part Context
This part is a member of the BFU5 series of NPN wideband silicon RF transistors. The series includes variants such as the BFU520XR and BFU550XR, which share similar architectural foundations but differ in frequency and power capabilities. The BFU530XR bridges these options with specific gain and noise profiles.
Replacement Considerations
Cross-reference with BFU520XR or BFU550XR only if pin compatibility and electrical margins align with application requirements. Verify that alternative devices meet the same AEC-Q101 qualification standards and package dimensions.
