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Product Detailed Parameters
- Description：RF TRANS NPN 3V 53GHZ DFN1006C-3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：3V
- Frequency - Transition：53GHz
- Noise Figure (dB Typ @ f)：0.75dB @ 6GHz
- Gain：15.8dB
- Power - Max：160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：205 @ 2mA, 3V
- Current - Collector (Ic) (Max)：30mA
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：3-XFDFN
- Supplier Device Package：DFN1006C-3
- Grade：-
- Qualification：-
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Overview
The BFU730LX is an NPN silicon germanium microwave transistor designed for high-speed, low-noise applications. It utilizes 110 GHz fT technology and is housed in a leadless ultra-small plastic SMD package (SOT883C) measuring 1.0 mm x 0.6 mm x 0.34 mm. Key electrical parameters include a maximum power gain of 15.8 dB at 6 GHz and a noise figure of 0.75 dB at 6 GHz. The device supports a collector current up to 30 mA and total power dissipation of 160 mW.
Feature Summary
- Leadless ultra-small plastic surface-mounted device package
- Low noise high gain microwave transistor performance
- Excellent linearity characteristics for WiFi LNA applications
- 110 GHz transition frequency silicon germanium technology
Applications
- Wi-Fi / WLAN Low Noise Amplifiers
- WiMAX systems
- LNA for GPS, GLONASS, Galileo, and Compass (BeiDou)
- DBS second LNA stage, mixer stage, and DRO
- RKE, AMR, and Zigbee applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's current catalog to ensure compatibility with required packaging or tape-and-reel specifications. Confirm that the component meets all necessary environmental and safety standards for the intended deployment environment before finalizing procurement orders.
Selection Notes
Select this component for designs requiring minimal footprint and high-frequency performance. Ensure biasing circuits support the recommended operating conditions, specifically maintaining junction temperature within limits. Verify impedance matching networks align with the specified S-parameters for optimal gain and noise figure at target frequencies.
Part Context
This part belongs to the BFU730 series of NPN wideband silicon germanium RF transistors manufactured by NXP Semiconductors. The series is engineered for microwave communications, offering a balance of low noise and high gain in a compact form factor suitable for portable and high-density electronic devices.
Replacement Considerations
Consult the official NXP documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' silicon germanium transistors without validating pinout, electrical parameters, and thermal characteristics against the original specification sheet.
