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Product Detailed Parameters
- Description：RF TRANS NPN 15V 1.3GHZ TO-72
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：1.3GHz
- Noise Figure (dB Typ @ f)：2.5dB ~ 5dB @ 500MHz
- Gain：20dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 25mA, 1V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-206AF, TO-72-4 Metal Can
- Supplier Device Package：TO-72
- Grade：-
- Qualification：-
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Overview
The BFY90 is a silicon NPN RF transistor manufactured by Central Semiconductor, designed for VHF/UHF amplifier, oscillator, and converter applications. It features a TO-72 case with a maximum collector-emitter voltage (VCEO) of 15V and continuous collector current of 25mA. The device exhibits a transition frequency (fT) up to 1.4 GHz at 25mA and provides power gain ranging from 8.0 dB at 800MHz to 23 dB at 200MHz under specified bias conditions.
Feature Summary
- Optimized for VHF and UHF signal processing tasks including amplification and oscillation
- Capable of high-frequency operation with transition frequencies reaching 1.4 GHz
- Provides significant power gain across the 200MHz to 800MHz spectrum
Applications
- VHF/UHF amplifier circuits
- Oscillator designs
- Converter applications
Procurement Notes
Verify the manufacturer designation on official documentation, as the model appears in datasheets issued by Central Semiconductor rather than Microsemi Corporation. Confirm the specific ordering suffixes required for plating options, such as TIN/LEAD or PBFREE, directly with authorized distributors to ensure compliance with project specifications.
Selection Notes
Select this component when designing low-power RF stages requiring NPN topology within the VHF/UHF bands. Ensure the operating collector current remains within the 25mA continuous limit and that the circuit design accommodates the 15V collector-emitter breakdown voltage. Evaluate thermal management requirements given the TO-72 package constraints.
Part Context
The BFY90 belongs to a family of silicon NPN RF transistors alongside the BFX89. Both devices share similar structural characteristics but differ in specific electrical performance metrics such as gain and noise figure. This component serves as a discrete solution for analog radio frequency signal conditioning in compact electronic systems.
Replacement Considerations
The BFX89 is documented as a complementary variant within the same product family. Verify if the BFX89 meets the specific gain and noise requirements of the target application before substitution.
