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The BG3230 is a dual N-channel MOSFET tetrode designed for low noise gain controlled input stages in UHF and VHF tuners. It integrates two AGC amplifiers within a single SOT363 package, featuring a stabilized bias network and integrated gate protection diodes. The device operates with a 5V supply voltage and delivers high gain with a low noise figure. Key electrical characteristics include a drain-source breakdown voltage of 12V, an operating current of 13mA, and a forward transconductance of 33mS at 5V. Power gain reaches 31dB at 45MHz and 24dB at 800MHz.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required tape and reel packaging format. Ensure handling precautions are observed due to electrostatic discharge sensitivity. Review the datasheet for thermal resistance limits and maximum ratings before integration.
Select this component for designs requiring dual independent gain control paths in a compact footprint. The SOT363 package supports surface mount assembly. Evaluate the 8V drain-source voltage limit against peak signal levels. Consider the 200mW total power dissipation capability relative to ambient temperature conditions.
This part belongs to the family of discrete RF MOSFETs manufactured by Infineon Technologies. It is specifically engineered for tuner applications where size constraints and signal integrity are critical. The dual tetrode structure allows for balanced differential configurations or independent channel operation in receiver front-ends.
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify that the replacement offers comparable noise figures at 45MHz and 800MHz. Ensure the alternative maintains similar AGC range and cross-modulation performance. Check for pin compatibility with the SOT363 package.