BG 3230 E6327

BG 3230 E6327

  • Description:RF MOSFET 5V SOT363
  • Series:-

SKU:7a9883a5a9c8 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 5V SOT363
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:800MHz
  • Gain:24dB
  • Voltage - Test:5 V
  • Current Rating (Amps):25mA
  • Noise Figure:1.3dB
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:8 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO
  • Configuration:2 N-Channel (Dual)

Download product information

BG 3230 E6327

Overview

The BG3230 is a dual N-channel MOSFET tetrode designed for low noise gain controlled input stages in UHF and VHF tuners. It integrates two AGC amplifiers within a single SOT363 package, featuring a stabilized bias network and integrated gate protection diodes. The device operates with a 5V supply voltage and delivers high gain with a low noise figure. Key electrical characteristics include a drain-source breakdown voltage of 12V, an operating current of 13mA, and a forward transconductance of 33mS at 5V. Power gain reaches 31dB at 45MHz and 24dB at 800MHz.

Feature Summary

  • Dual amplifier configuration integrating two AGC amplifiers in one package
  • Integrated stabilized bias network for simplified circuit design
  • High gain performance with low noise figure suitable for RF applications
  • Improved cross-modulation characteristics during gain reduction

Applications

  • Low noise gain controlled input stages of UHF tuners
  • Low noise gain controlled input stages of VHF tuners
  • RF front-end circuits requiring automatic gain control

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required tape and reel packaging format. Ensure handling precautions are observed due to electrostatic discharge sensitivity. Review the datasheet for thermal resistance limits and maximum ratings before integration.

Selection Notes

Select this component for designs requiring dual independent gain control paths in a compact footprint. The SOT363 package supports surface mount assembly. Evaluate the 8V drain-source voltage limit against peak signal levels. Consider the 200mW total power dissipation capability relative to ambient temperature conditions.

Part Context

This part belongs to the family of discrete RF MOSFETs manufactured by Infineon Technologies. It is specifically engineered for tuner applications where size constraints and signal integrity are critical. The dual tetrode structure allows for balanced differential configurations or independent channel operation in receiver front-ends.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify that the replacement offers comparable noise figures at 45MHz and 800MHz. Ensure the alternative maintains similar AGC range and cross-modulation performance. Check for pin compatibility with the SOT363 package.

BG 3230 E6327BG 3230 E6327

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