BG3123E6327HTSA1

Overview

The BG3123E6327HTSA1 is a dual N-channel MOSFET tetrode designed for UHF and VHF tuners. It features two gain-controlled input stages optimized for amplifier A (VHF) and amplifier B (UHF). The device includes integrated gate protection diodes and is qualified according to AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 8 V, continuous drain currents of 25 mA for amp. A and 20 mA for amp. B, and a total power dissipation of 200 mW. At 800 MHz, the power gain is 25 dB for amp. A and 24 dB for amp. B.

Feature Summary

• Dual N-channel MOSFET tetrode architecture with separate gain-controlled input stages for distinct VHF and UHF amplifier applications.
• Integrated gate protection diodes to enhance device reliability during electrostatic discharge events.
• Optimized performance characteristics for low noise figure and high gain across specified frequency bands.

Applications

• UHF tuner amplifier stages
• VHF tuner amplifier stages
• NTSC and PAL television tuner circuits

Procurement Notes

Verify component authenticity by checking the marking code against the SOT363 package layout. Confirm RoHS compliance status as indicated in the datasheet. Ensure handling precautions are observed due to the device's sensitivity to electrostatic discharge during assembly and testing procedures.

Selection Notes

Select this component when designing tuners requiring independent gain control for both VHF and UHF bands within a single package. Consider the 8 V maximum drain-source voltage limit and the specific thermal resistance requirements for the intended operating environment.

Part Context

This part belongs to the BG3123 series of dual MOSFET tetrodes manufactured by Infineon Technologies. It utilizes the SOT363 surface-mount package. The E6327HTSA1 suffix denotes the specific tape-and-reel packaging configuration used for automated assembly processes.

Replacement Considerations

No official substitutes are listed in the documentation. When evaluating alternatives, verify that the replacement supports dual N-channel MOSFET tetrode functionality, matches the SOT363 footprint, and meets the 8 V drain-source voltage requirement.