BG3123RE6327HTSA1

BG3123RE6327HTSA1

  • Description:RF MOSFET 5V SOT363
  • Series:-

SKU:b190ff6159ca Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 5V SOT363
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:800MHz
  • Gain:25dB
  • Voltage - Test:5 V
  • Current Rating (Amps):25mA, 20mA
  • Noise Figure:1.8dB
  • Current - Test:14 mA
  • Power - Output:-
  • Voltage - Rated:8 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO
  • Configuration:2 N-Channel (Dual)

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BG3123RE6327HTSA1

Overview

The BG3123RE6327HTSA1 is a dual N-channel MOSFET tetrode in an SOT-363 package. It features two gain-controlled input stages optimized for UHF and VHF tuners. Key electrical parameters include a drain-source voltage of 8 V, continuous drain current of 25 mA (Amp A) or 20 mA (Amp B), and total power dissipation of 200 mW. At 800 MHz, it provides a typical power gain of 25 dB for Amp A and 24 dB for Amp B, with a noise figure of 1.8 dB.

Feature Summary

  • Dual N-channel MOSFET tetrode architecture with two independent gain-controlled input stages
  • Integrated gate protection diodes to enhance circuit robustness
  • Optimized performance characteristics specifically for UHF and VHF tuner applications

Applications

  • UHF amplifier stages in NTSC and PAL television tuners
  • VHF amplifier stages in NTSC and PAL television tuners
  • RF signal amplification requiring high AGC range and low noise figure

Procurement Notes

Verify the component marking code matches 'KR' for the BG3123R variant within the SOT-363 package. Confirm the datasheet revision aligns with the specific ordering suffix requirements. Ensure handling precautions are observed due to electrostatic discharge sensitivity during installation.

Selection Notes

Select this device when designing RF front-ends for broadcast receivers requiring integrated gain control. The dual-stage structure simplifies biasing networks compared to discrete solutions. Evaluate thermal resistance constraints carefully as the total power dissipation is limited to 200 mW in small surface-mount packages.

Part Context

This component belongs to Infineon's specialized RF MOSFET portfolio designed for consumer electronics. It serves as a direct replacement for legacy dual-gate MOSFETs previously used in analog television tuner circuits. The technology focuses on minimizing cross-modulation distortion while maintaining high linearity across varying signal levels.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. When replacing, verify pin compatibility within the SOT-363 footprint and ensure the new component supports the required 8 V drain-source voltage rating and similar gain characteristics at 800 MHz.

BG3123RE6327HTSA1BG3123RE6327HTSA1

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