BG3123RH6327XTSA1

BG3123RH6327XTSA1

  • Description:RF MOSFET 5V SOT363
  • Series:-

SKU:2742d3788a06 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 5V SOT363
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:800MHz
  • Gain:25dB
  • Voltage - Test:5 V
  • Current Rating (Amps):25mA, 20mA
  • Noise Figure:1.8dB
  • Current - Test:14 mA
  • Power - Output:-
  • Voltage - Rated:8 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO
  • Configuration:2 N-Channel (Dual)

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BG3123RH6327XTSA1

Overview

The BG3123RH6327XTSA1 is a dual N-Channel MOSFET tetrode manufactured by Infineon Technologies. It features two gain-controlled input stages optimized for UHF and VHF tuners, including NTSC and PAL standards. The device integrates gate protection diodes and offers high AGC range with low noise figure. Key electrical parameters include a drain-source voltage of 8 V, continuous drain current of 25 mA for amplifier A and 20 mA for amplifier B, and total power dissipation of 200 mW. At 800 MHz, the power gain is 25 dB for amp A and 24 dB for amp B. Noise figures are 1.8 dB at 800 MHz and 1.4 dB at 45 MHz for amp A.

Feature Summary

  • Dual N-Channel MOSFET tetrode architecture with separate gain-controlled input stages for UHF and VHF applications
  • Integrated gate protection diodes to enhance component reliability during operation
  • High automatic gain control (AGC) range combined with low noise figure performance
  • Qualified according to AEC Q101 automotive standards for robust application environments

Applications

  • UHF amplifiers in television tuner circuits
  • VHF amplifiers in television tuner circuits
  • NTSC standard tuner modules
  • PAL standard tuner modules

Procurement Notes

Verify the specific ordering suffix RH6327XTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and marking details. Ensure compliance with RoHS requirements and AEC Q101 qualification status as stated in the datasheet before finalizing procurement orders.

Selection Notes

Select this component for designs requiring integrated dual-stage amplification within a compact SOT363 package. Consider the distinct drain current limits of 25 mA for amplifier A and 20 mA for amplifier B when designing biasing networks. Evaluate the thermal resistance characteristics if operating near maximum power dissipation limits.

Part Context

This part belongs to the BG3123 series of dual N-Channel MOSFET tetrodies designed specifically for tuner applications. The device consolidates two independent gain-controlled stages into a single surface-mount package, simplifying circuit board layout for broadcast receiver systems while maintaining signal integrity across UHF and VHF bands.

Replacement Considerations

No official substitute part numbers are documented in the provided source material. When evaluating alternatives, verify that replacement components match the SOT363 package dimensions, pin configuration, and electrical ratings such as the 8 V drain-source voltage limit.

BG3123RH6327XTSA1BG3123RH6327XTSA1

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