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The BG3123RH6327XTSA1 is a dual N-Channel MOSFET tetrode manufactured by Infineon Technologies. It features two gain-controlled input stages optimized for UHF and VHF tuners, including NTSC and PAL standards. The device integrates gate protection diodes and offers high AGC range with low noise figure. Key electrical parameters include a drain-source voltage of 8 V, continuous drain current of 25 mA for amplifier A and 20 mA for amplifier B, and total power dissipation of 200 mW. At 800 MHz, the power gain is 25 dB for amp A and 24 dB for amp B. Noise figures are 1.8 dB at 800 MHz and 1.4 dB at 45 MHz for amp A.
Verify the specific ordering suffix RH6327XTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and marking details. Ensure compliance with RoHS requirements and AEC Q101 qualification status as stated in the datasheet before finalizing procurement orders.
Select this component for designs requiring integrated dual-stage amplification within a compact SOT363 package. Consider the distinct drain current limits of 25 mA for amplifier A and 20 mA for amplifier B when designing biasing networks. Evaluate the thermal resistance characteristics if operating near maximum power dissipation limits.
This part belongs to the BG3123 series of dual N-Channel MOSFET tetrodies designed specifically for tuner applications. The device consolidates two independent gain-controlled stages into a single surface-mount package, simplifying circuit board layout for broadcast receiver systems while maintaining signal integrity across UHF and VHF bands.
No official substitute part numbers are documented in the provided source material. When evaluating alternatives, verify that replacement components match the SOT363 package dimensions, pin configuration, and electrical ratings such as the 8 V drain-source voltage limit.