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The BG3130E6327HTSA1 is a dual N-channel MOSFET tetrode in an SOT-363 package. It integrates two gain-controlled input stages for UHF and VHF tuners, providing two AGC amplifiers within a single component. Key electrical parameters include a drain-source voltage of 8 V, continuous drain current of 25 mA, and total power dissipation of 200 mW. At 800 MHz, the device exhibits a typical power gain of 24 dB with a noise figure of 1.3 dB. The forward transconductance is typically 33 mS, and it features integrated gate protection diodes.
Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and lead times. Ensure compatibility with SOT-363 footprint requirements during procurement planning. Cross-reference datasheet revision dates to validate parameter accuracy before finalizing orders.
Select this component when designing compact RF front-ends requiring dual independent gain control channels. Evaluate thermal resistance characteristics relative to the expected ambient temperature and power dissipation limits. Confirm that the 8 V drain-source voltage rating aligns with the system supply rails and operational headroom requirements.
This part belongs to Infineon's discrete MOSFET portfolio designed specifically for RF tuner modules. The SOT-363 surface-mount package facilitates space-constrained PCB layouts common in consumer electronics. It serves as a specialized solution for analog video signal conditioning where dual-stage amplification is necessary.
No official substitutes are listed in the provided documentation. When evaluating alternatives, verify pinout compatibility with the SOT-363 configuration and ensure equivalent RF performance metrics at target frequencies.
The maximum continuous drain-source voltage (VDS) is rated at 8 V.
The device contains two independent gain-controlled input stages, functioning as two AGC amplifiers.
The typical power gain (Gp) at 800 MHz is 24 dB.