BG3130E6327HTSA1

BG3130E6327HTSA1

  • Description:RF MOSFET 5V SOT363
  • Series:-

SKU:153525316910 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 5V SOT363
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:800MHz
  • Gain:24dB
  • Voltage - Test:5 V
  • Current Rating (Amps):25mA
  • Noise Figure:1.3dB
  • Current - Test:14 mA
  • Power - Output:-
  • Voltage - Rated:8 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO
  • Configuration:2 N-Channel (Dual)

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BG3130E6327HTSA1

Overview

The BG3130E6327HTSA1 is a dual N-channel MOSFET tetrode in an SOT-363 package. It integrates two gain-controlled input stages for UHF and VHF tuners, providing two AGC amplifiers within a single component. Key electrical parameters include a drain-source voltage of 8 V, continuous drain current of 25 mA, and total power dissipation of 200 mW. At 800 MHz, the device exhibits a typical power gain of 24 dB with a noise figure of 1.3 dB. The forward transconductance is typically 33 mS, and it features integrated gate protection diodes.

Feature Summary

  • Dual amplifier architecture integrating two gain-controlled input stages for UHF and VHF tuner applications
  • High automatic gain control range combined with low noise figure and high gain performance
  • Integrated gate protection diodes to enhance circuit reliability

Applications

  • UHF and VHF tuners for NTSC and PAL video systems
  • Automatic gain control (AGC) amplifier circuits
  • RF signal processing stages requiring low noise and high linearity

Procurement Notes

Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and lead times. Ensure compatibility with SOT-363 footprint requirements during procurement planning. Cross-reference datasheet revision dates to validate parameter accuracy before finalizing orders.

Selection Notes

Select this component when designing compact RF front-ends requiring dual independent gain control channels. Evaluate thermal resistance characteristics relative to the expected ambient temperature and power dissipation limits. Confirm that the 8 V drain-source voltage rating aligns with the system supply rails and operational headroom requirements.

Part Context

This part belongs to Infineon's discrete MOSFET portfolio designed specifically for RF tuner modules. The SOT-363 surface-mount package facilitates space-constrained PCB layouts common in consumer electronics. It serves as a specialized solution for analog video signal conditioning where dual-stage amplification is necessary.

Replacement Considerations

No official substitutes are listed in the provided documentation. When evaluating alternatives, verify pinout compatibility with the SOT-363 configuration and ensure equivalent RF performance metrics at target frequencies.

FAQ

What is the maximum drain-source voltage rating?

The maximum continuous drain-source voltage (VDS) is rated at 8 V.

How many amplifiers are integrated into this package?

The device contains two independent gain-controlled input stages, functioning as two AGC amplifiers.

What is the typical power gain at 800 MHz?

The typical power gain (Gp) at 800 MHz is 24 dB.

BG3130E6327HTSA1BG3130E6327HTSA1

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