BG3130RH6327XTSA1

BG3130RH6327XTSA1

$0.08
  • Description:RF MOSFET 5V SOT363
  • Series:-

SKU:9741fad06855 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 5V SOT363
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Frequency:800MHz
  • Gain:24dB
  • Voltage - Test:5 V
  • Current Rating (Amps):25mA
  • Noise Figure:1.3dB
  • Current - Test:14 mA
  • Power - Output:-
  • Voltage - Rated:8 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO
  • Configuration:2 N-Channel (Dual)

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BG3130RH6327XTSA1

Overview

The BG3130RH6327XTSA1 is a dual N-channel MOSFET tetrode in an SOT-363 package. It integrates two gain-controlled input stages for UHF and VHF tuners, featuring integrated gate protection diodes. Key electrical parameters include a drain-source voltage of 8 V, continuous drain current of 25 mA, and total power dissipation of 200 mW. At 800 MHz with VDS = 5 V, it provides a typical power gain of 24 dB and a noise figure of 1.3 dB. The device supports a gain control range of 45 dB via the AGC pin.

Feature Summary

  • Dual amplifier configuration within a single compact package
  • Integrated gate protection diodes for enhanced reliability
  • High automatic gain control (AGC) range with low noise figure
  • Optimized cross-modulation performance at reduced gain levels

Applications

  • UHF tuner circuits
  • VHF tuner circuits
  • NTSC television systems
  • PAL television systems

Procurement Notes

Verify component authenticity by checking the manufacturer marking against the official datasheet specifications. Confirm the package type matches the required footprint dimensions. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Review the thermal resistance characteristics during PCB layout planning.

Selection Notes

Select this component when designing UHF or VHF tuner applications requiring dual amplification stages. Consider the 8 V maximum drain-source voltage limit for supply rail compatibility. Evaluate the 200 mW total power dissipation capability against the expected thermal environment. Verify that the SOT-363 package dimensions fit the available board space constraints.

Part Context

This part belongs to the BG3130 series of dual N-channel MOSFET tetrodes manufactured by Infineon Technologies. It is specifically engineered for broadcast receiver front-end applications. The device consolidates two separate amplifier functions into one surface-mount package to reduce circuit complexity and board area requirements.

Replacement Considerations

No official substitutes are listed in the documentation. When evaluating alternatives, ensure the replacement supports dual N-channel MOSFET tetrode functionality in an SOT-363 package. Verify that the substitute meets the 8 V drain-source voltage rating and 25 mA continuous drain current requirement.

BG3130RH6327XTSA1BG3130RH6327XTSA1
$0.08
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