BG3430RE6327HTSA1

Overview

The BG3430RE6327HTSA1 is a dual N-channel MOSFET tetrode designed for the input stages of 2-band tuners. It integrates two AGC amplifiers within a single SOT-363 package, featuring an on-chip internal switch controlled by a single line. The device includes integrated gate protection diodes and operates with a drain-source voltage (VDS) of 8 V and continuous drain current (ID) of 25 mA. Key electrical parameters include a power gain of 25 dB at 800 MHz and 33 dB at 45 MHz, with a noise figure of 1.3 dB at 800 MHz and 1 dB at 45 MHz. Total power dissipation is rated at 200 mW.

Feature Summary

• Dual amplifier architecture with integrated switching capability
• High gain and low noise figure performance
• Integrated gate protection diodes

Applications

• Input stages of 2-band tuners
• Automatic Gain Control (AGC) circuits

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the ordering suffix matches the required tape-and-reel packaging specifications. Ensure compliance with AEC-Q101 qualification standards if automotive integration is intended. Validate RoHS compliance status prior to procurement.

Selection Notes

Select this component when designing tuner input stages requiring dual amplification in a compact form factor. Consider the 8 V drain-source voltage limit and 200 mW total power dissipation constraints during thermal management planning. Evaluate the 45 dB gain control range against system requirements.

Part Context

This part belongs to the BG3430R series of dual N-channel MOSFET tetrodes manufactured by Infineon Technologies. It is specifically engineered for RF applications involving signal amplification and gain control within tuner architectures.

Replacement Considerations

No official substitutes are documented. Verify pin compatibility and electrical characteristics before considering alternative components from other manufacturers.

FAQ

How is the internal switch controlled?

The internal switch controlling both FETs is managed via a single switching line.

What is the maximum drain-source voltage?

The maximum drain-source voltage (VDS) is 8 V.

Does the device support automatic gain control?

Yes, it features high AGC-range capabilities suitable for amplifier applications.