BG3430RH6327XTSA1

Overview

The BG3430RH6327XTSA1 is a dual N-channel MOSFET tetrode designed for the input stages of 2-band tuners. It integrates two AGC amplifiers within a single SOT-363 package, featuring an on-chip internal switch controlled by a single line. The device includes integrated gate protection diodes and operates with a maximum drain-source voltage of 8 V and continuous drain current of 25 mA. At 800 MHz, it provides a power gain of 25 dB with a noise figure of 1.3 dB. The component is qualified according to AEC-Q101 standards.

Feature Summary

• Dual amplifier architecture with integrated switching capability
• Single control line manages both FETs via internal switch
• Integrated gate protection diodes for enhanced reliability

Applications

• Input stages of 2-band tuners
• Automatic Gain Control (AGC) amplifier circuits
• RF signal processing in tuner modules

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking configurations. Confirm RoHS compliance status and AEC-Q101 qualification requirements prior to integration into automotive or industrial designs.

Selection Notes

Select this component when a compact dual-amplifier solution with integrated switching is required for tuner applications. Ensure the design accommodates the 8 V drain-source voltage limit and utilizes the single-line control interface for efficient AGC management.

Part Context

This part belongs to the BG3430R series of dual N-channel MOSFET tetrodes. It is manufactured using standard semiconductor processes and is housed in a surface-mount SOT-363 package suitable for automated assembly.

Replacement Considerations

No official substitute part numbers are documented. Evaluate alternative dual MOSFET tetrodes based on pin compatibility, voltage ratings, and gain specifications if replacement is necessary.