BGM15MA12E6327XTSA1

RF Amplifiers Overview

The BGM15MA12E6327XTSA1 is a low noise amplifier (LNA) manufactured by Infineon Technologies, designed for RF applications in the 1.7 GHz to 2.2 GHz frequency range. It operates within a supply voltage of 2.2 V to 3.3 V and consumes a typical current of 4.9 mA. The device provides a gain of 15.7 dB with a noise figure of 1.35 dB. Key performance metrics include a P1dB compression point of -8 dBm and an OIP3 value specified in its documentation. It utilizes Si technology and is housed in a compact SLP-12 package suitable for surface mount installation.

RF Amplifiers Feature Summary

• Integrated low noise amplifier optimized for RF signal amplification
• Compact SLP-12 surface mount package design
• Operates on standard single-supply voltage ranges

RF Amplifiers Applications

• Bluetooth Low Energy (BLE) modules
• IoT devices requiring RF front-end amplification
• Wireless communication systems operating in the 1.7-2.2 GHz band

RF Amplifiers Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific suffix matches the required frequency and package specifications. Ensure storage conditions comply with moisture sensitivity levels indicated in the datasheet. Check for obsolescence status as availability may vary. Validate RoHS compliance if environmental regulations apply to your manufacturing process.

RF Amplifiers Selection Notes

Select this component when designing circuits for the 1.7-2.2 GHz spectrum requiring low noise performance. Consider the 15.7 dB gain and 1.35 dB noise figure for sensitive receiver chains. Evaluate the SLP-12 footprint against PCB space constraints. Compare power consumption requirements against the 4.9 mA typical draw. Ensure the supply voltage range aligns with the system's power architecture.

RF Amplifiers Part Context

This part belongs to Infineon's portfolio of radio frequency integrated circuits. It serves as a critical component in modern wireless connectivity solutions. The device complements other RF switches and protection diodes in complete transceiver front-ends. Its design supports miniaturization trends in portable electronics and IoT hardware development.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon resources for potential cross-references or next-generation replacements.