BLA0912-250,112

BLA0912-250,112

  • Description:RF MOSFET LDMOS 36V SOT502A
  • Series:-

SKU:6243a2a1f390 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 36V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:960MHz ~ 1.22GHz
  • Gain:13dB
  • Voltage - Test:36 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:250W
  • Voltage - Rated:75 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

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BLA0912-250,112

Overview

The BLA0912-250 is a silicon N-channel enhancement mode LDMOS transistor designed for avionics applications. It operates within the 960 MHz to 1215 MHz frequency range and delivers an output power of 250 W at a drain-source voltage of 36 V. The device features a typical power gain of 13 dB and a drain efficiency of 50%. Encapsulated in a flanged SOT502A ceramic package, it connects the common source directly to the mounting base. This configuration eliminates the need for DC isolators and reduces common-mode inductance.

Feature Summary

  • High power gain and excellent ruggedness suitable for demanding environments
  • Source connected to the mounting base to eliminate DC isolators
  • Reduced common-mode inductance through direct base connection
  • Capable of withstanding load mismatches up to VSWR = 5:1

Applications

  • Mode-S transponder systems
  • TCAS (Traffic Collision Avoidance System)
  • JTIDS (Joint Tactical Information Distribution System)
  • DME (Distance Measuring Equipment)
  • TACAN (Tactical Air Navigation)

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation before purchase. Confirm that the component matches the required SOT502A flanged package variant. Ensure compliance with ESD handling protocols during transport and assembly. Check for any export control restrictions applicable to this RF semiconductor. Validate that the intended application falls outside automotive or life-critical safety systems.

Selection Notes

Select this component for avionics transmitter designs operating between 960 MHz and 1215 MHz. Ensure the heatsink interface maintains a thermal impedance below 0.18 K/W. Verify that the circuit can support a drain voltage of 36 V and provide adequate bias current. Consider the device's capability to handle high VSWR conditions without failure. Confirm that the physical dimensions of the SOT502A package fit the mechanical constraints.

Part Context

This part belongs to Ampleon's portfolio of LDMOS transistors specialized for aviation communication and navigation. It serves as a core active element in high-power amplifier stages for airborne radar and identification systems. The device represents a mature technology optimized for reliability in critical flight operations.

Replacement Considerations

Consult official Ampleon cross-reference lists for verified substitutes. Do not assume functional equivalence with other manufacturers' parts without rigorous testing. Verify pinout compatibility if considering alternative packages.

FAQ

What is the maximum load mismatch the device can withstand?

The BLA0912-250 can withstand a load mismatch corresponding to a VSWR of 5:1 through all phases under rated load power conditions.

How is the source terminal connected in this package?

The common source is connected directly to the mounting flange, which is bolted to the heatsink.

What is the typical drain efficiency at 250 W output?

The typical drain efficiency is 50% when operating at 250 W output power in class-AB mode.

BLA0912-250,112BLA0912-250,112

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