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The BLA0912-250R,112 is a silicon N-channel enhancement mode LDMOS transistor designed for avionics applications. It operates within the 960 MHz to 1215 MHz frequency range and delivers an output power of 250 W in class-AB operation. The device features a drain-source breakdown voltage of 75 V and a typical power gain of 13 dB at rated load. Packaged in a flanged SOT502A ceramic enclosure with two mounting holes, it utilizes a common source connected to the mounting base. This configuration eliminates the need for DC isolators and reduces common-mode inductance.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variations or tape-and-reel configurations. Ensure compatibility with existing thermal management solutions, as the device requires direct mounting to a heatsink via its flange. Confirm that the application environment adheres to the specified temperature ranges and ESD protection protocols during handling.
Select this component for avionics transmitter designs requiring high efficiency and robust performance in the L-band spectrum. The integrated source-to-flange connection allows for simplified biasing networks by removing external isolation components. Evaluate impedance matching requirements using the provided typical input and output impedance values across the operational bandwidth.
This part belongs to the BLA series of avionics LDMOS power transistors manufactured by Ampleon. These devices are engineered specifically for demanding radio frequency environments found in modern aircraft communication and navigation systems. The series emphasizes reliability and high power density within compact ceramic packages suitable for screw-mount installation.
Consult the official Ampleon datasheet for cross-reference information regarding legacy NXP semiconductors parts. Verify pinout compatibility and thermal resistance specifications before substituting any alternative RF power transistors in existing hardware designs.