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The Ampleon BLA1011-200 is a 200 W LDMOS avionics power transistor designed for transmitter applications operating between 1030 MHz and 1090 MHz. It features a drain-source voltage of 75 V, a junction temperature limit of 200 °C, and a total power dissipation of 700 W under pulsed conditions. Typical performance at 36 V supply and 150 mA quiescent current includes a load power of 200 W, gain of 15 dB, and drain efficiency of 50%. The device utilizes a flanged ceramic package (SOT502A) with the source connected to the mounting flange.
Verify the specific ordering suffix to confirm the package variant. The standard BLA1011-200 uses the SOT502A flanged ceramic package with two mounting holes. Ensure compatibility with the application's thermal management requirements, as the device requires direct mounting to a heatsink via the flange for proper operation.
Select this component for avionics systems requiring high output power within the 1030 MHz to 1090 MHz band. Consider the BLA1011S-200 if an earless flanged package (SOT502B) is preferred. Verify that the design can accommodate the 36 V supply requirement and the necessary thermal resistance to maintain junction temperatures below the 200 °C maximum limit.
This part belongs to Ampleon's lineup of LDMOS transistors specifically engineered for avionics. It is designed to operate reliably in demanding RF environments, offering robust performance in pulse class-AB modes. The product data sheet provides detailed electrical characteristics and thermal impedance values to assist in circuit design and thermal analysis.
The BLA1011S-200 is a compatible alternative featuring an earless flanged package (SOT502B). Both variants share identical electrical specifications and pinout configurations. Designers must ensure that the mechanical mounting solution accommodates the specific package style selected.