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The BLA6H0912L-1000 is a 1000W LDMOS pulsed power transistor designed for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range. It operates with a drain-source voltage of 50 V and delivers an output power of 1000 W at 1030 MHz. The device provides a typical power gain of 15.5 dB and a drain efficiency of 51%. It features a flanged balanced ceramic package (SOT539A) with two mounting holes and four leads, ensuring robust thermal management and mechanical stability for high-power RF systems.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package variant selection. Confirm RoHS compliance status as required by project specifications. Validate that the component meets all absolute maximum rating limits before integration into final avionics designs.
Select this component for avionics radar and transmitter circuits requiring high pulsed power within the L-band spectrum. Ensure the design accommodates the specified junction temperature limit of 225 °C and utilizes appropriate heat sinking to maintain case temperatures within operational bounds during continuous pulsing.
This part belongs to the BLA6H0912L series of LDMOS avionics power transistors manufactured by Ampleon. It is specifically engineered for high-efficiency pulsed operation in demanding aviation environments. The SOT539A package distinguishes it from earless variants like the BLA6H0912LS-1000, providing enhanced mechanical mounting options via integrated flange holes.
The BLA6H0912LS-1000 serves as a functional alternative within the same family, differing primarily in its earless flanged ceramic package (SOT539B). Designers must verify mechanical fitment and mounting hole alignment when substituting between these package variants.