BLA8H0910L-500U

BLA8H0910L-500U

$467.47
  • Description:RF MOSFET LDMOS 50V SOT502A
  • Series:-

SKU:67fd5f876faa Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray,Tray
  • Technology:LDMOS
  • Frequency:900MHz ~ 930MHz
  • Gain:19dB
  • Voltage - Test:50 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:90 mA
  • Power - Output:500W
  • Voltage - Rated:114.5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

Download product information

BLA8H0910L-500U

Overview

The BLA8H0910L-500 is a 500 W LDMOS power transistor designed for avionics applications in the 900 MHz to 930 MHz frequency range. It supports high-power continuous wave (CW) operation and utilizes a flanged ceramic package (SOT502A). At VDS = 50 V, IDq = 90 mA, and f = 915 MHz, it delivers 500 W output power with 18 dB gain and 61% drain efficiency. The device withstands a load mismatch of VSWR = 30:1 through all phases. Key electrical limits include a drain-source voltage of 114.5 V and a junction temperature maximum of 225 °C.

Feature Summary

  • High efficiency and easy power control
  • Excellent ruggedness capable of withstanding severe load mismatches
  • Integrated ESD protection compliant with C1 and HBM Class 2 standards
  • Internally input matched for simplified broadband design

Applications

  • Avionics applications in the 900 MHz to 930 MHz frequency range

Procurement Notes

Verify the specific package variant required for the application. The 'L' suffix indicates a flanged ceramic package with two mounting holes (SOT502A), while the 'LS' variant lacks ears (SOT502B). Confirm RoHS compliance status and ensure handling procedures strictly follow electrostatic discharge precautions due to the component's sensitivity.

Selection Notes

Select this component for avionics systems requiring high CW power output within the 900 MHz to 930 MHz band. Ensure the thermal management system can maintain the case temperature at or below 65 °C during operation. Verify that the circuit design accommodates the specified 50 V drain supply and accounts for the internal matching network characteristics provided in the impedance data.

Part Context

This part belongs to Ampleon's portfolio of high-performance LDMOS power transistors tailored for demanding RF environments. The BLA8H0910L-500 is specifically engineered to meet the rigorous reliability and performance standards required for airborne communication and navigation equipment operating in the UHF spectrum.

Replacement Considerations

The datasheet documents the BLA8H0910LS-500 as a related variant differing only in the physical package construction (earless vs. flanged with holes). No other direct substitute part numbers are listed in the official documentation.

FAQ

What is the maximum load mismatch the device can withstand?

The BLA8H0910L-500 can withstand a load mismatch corresponding to a VSWR of 30:1 through all phases under specified class-AB operating conditions.

How does the package differ between the L and LS variants?

The BLA8H0910L-500 uses the SOT502A package, which is a flanged ceramic package with two mounting holes. The BLA8H0910LS-500 uses the SOT502B package, which is an earless flanged ceramic package.

What is the typical drain efficiency at full power output?

At 500 W output power, 915 MHz frequency, and VDS = 50 V, the typical drain efficiency is 61% for CW operation and 62.5% for pulsed operation.

BLA8H0910L-500UBLA8H0910L-500U
$467.47
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