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The BLA9H0912L-700G is a 700 W LDMOS power transistor designed for avionics applications in the 960 MHz to 1215 MHz frequency range. It utilizes an eared flanged ceramic package (SOT502F) with two leads and mounting holes. The device operates at a drain-source voltage of 50 V, delivering 700 W output power with a typical power gain of 20 dB and drain efficiency of 62%. Key electrical parameters include a gate-source threshold voltage ranging from 1.5 V to 2.5 V, a maximum junction temperature of 225 °C, and a drain-source breakdown voltage of 106 V.
Verify the specific SOT502F package configuration against design requirements. Confirm RoHS compliance status via official Ampleon channels. Ensure handling procedures meet CDM Class C2A and HBM Class 2 ESD sensitivity standards during assembly and testing.
Select this component for high-power avionics transmitters requiring robust performance within the specified UHF band. Evaluate thermal management capabilities given the 225 °C junction temperature limit. Consider the internal matching network to simplify RF circuit design compared to unmatched alternatives.
This part belongs to the BLA9H0912L(S)-700(G) family of power LDMOS transistors. Variants differ primarily in package style, such as the earless flanged SOT502E or the standard flanged SOT502A. All share identical core electrical specifications and target the same avionics frequency spectrum.
Direct replacements within the same family include BLA9H0912LS-700G (earless SOT502E), BLA9H0912L-700 (flanged SOT502A), and BLA9H0912LS-700 (earless SOT502B). Verify mechanical footprint compatibility when substituting between eared and earless packages.