BLA9H0912LS-1200PGJ

BLA9H0912LS-1200PGJ

$403.37
  • Description:RF MOSFET LDMOS 50V SOT539B
  • Series:-

SKU:340a5c2b3b5b Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT539B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:960MHz ~ 1.215GHz
  • Gain:19dB
  • Voltage - Test:50 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:200 mA
  • Power - Output:1200W
  • Voltage - Rated:106 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-539B
  • Supplier Device Package:SOT539B
  • Configuration:Dual, Common Source

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BLA9H0912LS-1200PGJ

Overview

The BLA9H0912LS-1200PG is a 1200 W LDMOS power transistor designed for avionics applications in the 960 MHz to 1215 MHz frequency range. It utilizes an earless flanged LDMOST ceramic package (SOT1248C) with four leads and features integrated dual-sided ESD protection. Typical performance at Tcase = 25 °C, VDS = 50 V, IDq = 75 mA, and PL = 1200 W includes a power gain of 19 dB, drain efficiency of 60%, and input return loss of -15 dB. The device withstands a load mismatch of VSWR = 20:1 through all phases under pulsed RF conditions.

Feature Summary

  • High efficiency and excellent thermal stability
  • Excellent ruggedness capable of withstanding VSWR = 20:1
  • Designed specifically for avionics band operation
  • Integrated dual-sided ESD protection enables excellent off-state isolation

Applications

  • Avionics applications in the frequency range of 960 MHz to 1215 MHz

Procurement Notes

Verify the specific ordering suffix PG against official Ampleon documentation to confirm the SOT1248C earless flanged LDMOST ceramic package variant. Ensure compatibility with avionics system requirements before procurement. Confirm RoHS compliance status via the manufacturer's website as specified in the product details section.

Selection Notes

Select this component for avionics systems requiring high output power within the 960 MHz to 1215 MHz band. Consider the SOT1248C package dimensions and mounting requirements during PCB layout. Verify that the application circuit can support the required VDS of 50 V and IDq bias currents to achieve the specified gain and efficiency levels.

Part Context

This part belongs to the BLA9H0912L(S)-1200P family of LDMOS avionics power transistors from Ampleon. It shares core electrical specifications with the BLA9H0912L-1200P and BLA9H0912LS-1200P variants but differs in its physical packaging configuration. The LS-1200PG variant specifically uses the SOT1248C outline.

Replacement Considerations

Direct replacements include BLA9H0912L-1200P and BLA9H0912LS-1200P, provided the mechanical package differences are accommodated in the design.

FAQ

What is the maximum load mismatch the device can withstand?

The device can withstand a load mismatch corresponding to VSWR = 20:1 through all phases under specified pulsed RF operating conditions.

What type of ESD protection does the BLA9H0912LS-1200PG feature?

It features integrated dual-sided ESD protection which enables excellent off-state isolation.

What is the typical drain efficiency at full power?

The typical drain efficiency is 60% when delivering 1200 W output power at Tcase = 25 °C.

BLA9H0912LS-1200PGJBLA9H0912LS-1200PGJ
$403.37
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