BLA9H0912LS-250GU

Overview

The BLA9H0912LS-250GU is a 250 W LDMOS power transistor designed for avionics applications in the 960 MHz to 1215 MHz frequency range. It utilizes an earless flanged ceramic package (SOT502E) with two leads and features integrated dual-sided ESD protection. Key electrical parameters include a drain-source breakdown voltage of 106 V, a gate-source threshold voltage ranging from 1.5 V to 2.5 V, and a maximum junction temperature of 225 °C. At 1030 MHz with a 50 V drain supply, it delivers 250 W output power with a typical power gain of 22 dB and a drain efficiency of 60%.

Feature Summary

• High efficiency and excellent ruggedness suitable for demanding avionics environments
• Integrated dual-sided ESD protection enabling excellent off-state isolation
• Internally matched design for ease of use and high flexibility with pulse formats
• Excellent thermal stability and easy power control capabilities

Applications

• Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range

Procurement Notes

Verify the specific SOT502E package variant against the official Ampleon datasheet to ensure compatibility with the intended mounting hardware. Confirm that the ordering suffix corresponds to the earless flanged ceramic construction. Check for RoHS compliance status on the manufacturer's website prior to finalizing procurement specifications.

Selection Notes

Select this component for avionics systems requiring robust performance within the 960 MHz to 1215 MHz band. Ensure the design accommodates the 106 V drain-source breakdown voltage and manages heat dissipation effectively given the 225 °C maximum junction temperature limit. Verify that the internal matching aligns with the system's impedance requirements without external components.

Part Context

This device belongs to the BLA9H0912L-250 family of LDMOS power transistors manufactured by Ampleon. The 'LS' designation indicates an earless flanged ceramic package (SOT502B/E), while the 'G' suffix typically denotes RoHS compliance. It shares core RF characteristics with other variants in the series but differs in physical mounting configuration.

Replacement Considerations

Direct replacements include BLA9H0912L-250, BLA9H0912LS-250, and BLA9H0912L-250G. Note that these alternatives utilize different package outlines (SOT502A, SOT502B, or SOT502F). Mechanical adaptation may be required due to variations in mounting holes and lead configurations.

FAQ

What is the maximum load mismatch the device can withstand?

The transistor can withstand a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) of 20:1 through all phases under specified pulsed operating conditions.

How does the device handle electrostatic discharge?

It features integrated dual-sided ESD protection. It is classified as C2A for Charged Device Model exposure and Class 2 for Human Body Model exposure.

What is the typical power gain at rated output?

At 1030 MHz with 250 W output power, the typical power gain is 22 dB.