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The BLA9H0912LS-250U is a 250 W LDMOS power transistor designed for avionics applications in the 960 MHz to 1215 MHz frequency range. It operates with a drain-source voltage of 50 V and delivers a typical power gain of 22 dB at 250 W output power. The device features an earless flanged ceramic package (SOT502B) with two leads. Key electrical characteristics include a drain-source breakdown voltage of 106 V, a gate-source threshold voltage ranging from 1.5 V to 2.5 V, and a maximum junction temperature of 225 °C. It exhibits a typical drain efficiency of 60% under pulsed RF conditions.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package variant selection. Confirm RoHS compliance status via official product details before procurement. Ensure handling procedures meet ESD sensitivity requirements specified in the datasheet. Validate that the application environment remains within the absolute maximum rating limits defined by Ampleon.
Select this component for avionics systems requiring 250 W output power within the designated frequency band. Consider the SOT502B earless flanged ceramic package for mounting constraints. Evaluate thermal management requirements based on the transient thermal impedance data provided. Ensure the circuit design supports the specified class-AB operation parameters for optimal performance.
This part belongs to the BLA9H0912L(S)-250(G) family of LDMOS avionics power transistors manufactured by Ampleon. The LS-250 variant specifically utilizes the SOT502B earless flanged ceramic package. Other family members include versions with different mounting configurations such as flanged packages with holes or eared designs, all sharing similar electrical profiles for avionics use.
Consult the official Ampleon datasheet for direct substitute part numbers within the same family. Verify pinout compatibility and package dimensions when considering alternative variants like the BLA9H0912L-250 or BLA9H0912LS-250G.