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The BLA9H0912LS-700U is a 700 W LDMOS power transistor designed for avionics applications in the frequency range from 960 MHz to 1215 MHz. It utilizes an earless flanged ceramic package (SOT502B) with two leads and features integrated dual-sided ESD protection. The device operates at a drain-source voltage of 50 V, delivering a typical power gain of 20 dB and a drain efficiency of 62% at 1030 MHz under pulsed RF conditions. Key electrical parameters include a gate-source threshold voltage of 2.0 V typ., a drain-source on-state resistance of 0.060 Ω, and a maximum junction temperature of 225 °C.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm that the component meets RoHS compliance requirements as specified by Ampleon. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly due to the device's sensitivity classification.
Select this component for high-power avionics transmitter designs requiring robust performance within the 960 MHz to 1215 MHz spectrum. Consider the SOT502B earless flanged ceramic package for mounting constraints. Evaluate thermal management solutions to maintain junction temperatures within the 225 °C limit during continuous or pulsed operation.
This part belongs to the BLA9H0912L(S)-700(G) family of power LDMOS transistors manufactured by Ampleon. The LS-700 variant specifically denotes the earless flanged ceramic package version (SOT502B), distinguishing it from other package options like the flanged ceramic package with mounting holes or eared variants within the same product line.
Direct replacements within the same family include BLA9H0912L-700, BLA9H0912L-700G, and BLA9H0912LS-700G. Verify package compatibility and pinout alignment when substituting between different package outlines such as SOT502A, SOT502B, SOT502E, or SOT502F.