BLC10G15XS-301AVTYZ

Overview

The BLC10G15XS-301AVTYZ is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. It operates within the frequency range of 1.805 GHz to 1.88 GHz, delivering an output power of 300 W with a gain of 15.6 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and on-resistances of 135 mOhms and 210 mOhms. Designed for surface mount applications, it utilizes the SOT1275-1-7 package and supports operating temperatures from -40°C to +150°C.

Feature Summary

• Dual N-channel LDMOS architecture for high-power RF amplification
• Optimized performance in the 1.805 GHz to 1.88 GHz frequency band
• High thermal stability supporting operation up to +150°C

Applications

• Base station power amplification
• Broadband RF signal processing
• Wireless communication infrastructure

Procurement Notes

Verify the specific suffix 'Z' against official Ampleon documentation to confirm packaging or material compliance differences compared to standard variants. Ensure compatibility with SOT1275-1-7 footprints during procurement planning. Cross-reference datasheet revisions to validate current manufacturing status and availability constraints.

Selection Notes

Select this component for designs requiring 300 W output at GSM/DCS frequencies. Compare Rds(on) values of 135 mOhms and 210 mOhms against thermal management capabilities. Confirm that the 65 V Vds rating aligns with the supply voltage requirements of the target amplifier circuit topology.

Part Context

This part belongs to the Ampleon BLC10G series of LDMOS transistors designed for cellular base stations. It shares architectural similarities with models like the BLC10G18XS-301AVTYZ but differs in specific package and thermal characteristics. The series targets high-efficiency power amplification in wireless infrastructure.

Replacement Considerations

Direct substitutes include BLC10G18XS-301AVTYZ for similar power levels, though package differences exist. Evaluate BLC10G18XS-552AVTY for higher power needs. Verify pinout and thermal pad configurations before substitution.