BLC10G15XS-301AVTZ

Overview

The BLC10G15XS-301AVTZ is a 350 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1452 MHz to 1492 MHz frequency range. It features a dual N-channel configuration with a drain-source breakdown voltage of 65 V and operates within a case temperature range of -40 °C to +150 °C. The device utilizes an SOT1275-1 air cavity plastic earless flanged package. Typical performance at Tcase = 25 °C includes a power gain of 18.2 dB, drain efficiency of 50.5%, and output power of 47.5 dBm under 1-carrier W-CDMA testing conditions.

Feature Summary

• Designed for low memory effects providing excellent digital pre-distortion capability
• Lower output capacitance for improved performance in Doherty applications
• Internally matched for ease of use
• Integrated ESD protection

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 1452 MHz to 1492 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging details. Ensure that the component meets all applicable RoHS compliance requirements as defined in the official product data sheet before finalizing procurement specifications.

Selection Notes

Select this component for asymmetric Doherty amplifier architectures operating between 1452 MHz and 1492 MHz. Consider the thermal resistance characteristics and the requirement for precise impedance matching networks for both main and peak devices to achieve optimal power gain and drain efficiency.

Part Context

This part belongs to the Ampleon BLC10G series of power LDMOS transistors. These components are engineered specifically for high-efficiency RF power amplification in cellular infrastructure. The device integrates ruggedness features suitable for demanding Doherty operation environments.

Replacement Considerations

Consult the official Ampleon replacement guide for verified substitute part numbers. Do not assume functional equivalence with other models without verifying pinout compatibility and electrical parameter alignment.

FAQ

What is the maximum junction temperature rating?

The maximum junction temperature (Tj) is rated at 225 °C according to the limiting values specification.

How does the device handle load mismatch in Doherty operation?

The transistor can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified operating conditions.

What is the ESD sensitivity classification?

The device has a Charged Device Model (CDM) classification of C2A and a Human Body Model (HBM) classification of 2.