BLC10G16XS-600AVTZ

Overview

The BLC10G16XS-600AVTZ is a dual N-channel LDMOS RF MOSFET transistor manufactured by Ampleon. Designed for surface mount applications, it operates within the frequency range of 1.427 GHz to 1.518 GHz. The device delivers an output power of 600 W with a gain of 17.4 dB. Key electrical parameters include a drain-source breakdown voltage (Vds) of 65 V and a drain-source on-resistance (Rds On) of 65.3 mOhms and 111 mOhms. It supports a gate-source voltage range of -6 V to +9 V with a threshold voltage of 2.4 V. The component functions reliably between -40°C and +125°C and is housed in an SOT1258-4-7 package.

Feature Summary

• Dual N-channel LDMOS technology for high-power RF amplification
• Optimized performance in the 1.427 GHz to 1.518 GHz frequency band
• Surface mount design compatible with automated assembly processes

Applications

• Base station power amplification
• Broadband wireless infrastructure
• RF signal generation systems

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm packaging type and moisture sensitivity level. Ensure compatibility with the intended PCB land pattern for the SOT1258-4-7 package. Confirm RoHS compliance status through the manufacturer's current product declaration before integration into regulated assemblies.

Selection Notes

Select this component when designing amplifiers requiring 600 W output power at UHF frequencies. Compare Rds On values against thermal management capabilities to ensure efficient operation. Verify that the system can support the required gate bias voltages and that the operating temperature range aligns with the environmental conditions of the final application.

Part Context

This part belongs to the BLC10 series of LDMOS transistors from Ampleon, which are engineered for high-efficiency radio frequency power amplification. The series utilizes advanced semiconductor processes to deliver robust performance in demanding wireless communication environments. The BLC10G16XS variant specifically targets applications requiring high linearity and power density in the sub-GHz spectrum.

Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-reference pinouts and thermal characteristics carefully when considering alternative packages or manufacturers.