BLC10G18XS-301AVTYZ

BLC10G18XS-301AVTYZ

$38.22
  • Description:RF MOSFET LDMOS 30V DFM6
  • Series:-

SKU:5e61c9bdfd16 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Bulk
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 1.88GHz
  • Gain:15.6dB
  • Voltage - Test:30 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:300 mA
  • Power - Output:300W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-1
  • Supplier Device Package:DFM6
  • Configuration:2 N-Channel (Dual) Common Source

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BLC10G18XS-301AVTYZ

Overview

The BLC10G18XS-301AVTYZ is a dual N-channel LDMOS RF MOSFET transistor manufactured by Ampleon. It operates within the frequency range of 1.805 GHz to 1.88 GHz, delivering an output power of 300 W with a gain of 15.6 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and on-resistances of 135 mOhms and 210 mOhms. Designed for surface mount installation in SOT1275-1-7 packages, it supports operating temperatures from -40°C to +150°C.

Feature Summary

  • Dual N-channel LDMOS technology for high-power RF applications
  • Optimized performance in the 1.805 GHz to 1.88 GHz frequency band
  • High output power capability of 300 W with significant gain
  • Robust thermal operation up to +150°C

Applications

  • Cellular base station power amplifiers
  • Broadband RF transmission systems
  • Industrial heating and plasma generation

Procurement Notes

Verify the specific suffix AVTYZ against official Ampleon documentation to confirm reel packaging and tape specifications. Ensure compatibility with SOT1275-1-7 footprint requirements during PCB design. Confirm RoHS compliance status through the manufacturer's latest datasheet before procurement integration.

Selection Notes

Select this component when designing amplifiers requiring 300 W output at GSM/DCS frequencies. Compare Rds(on) values of 135 mOhms and 210 mOhms against circuit efficiency targets. Ensure the system can handle the 65 V breakdown voltage and maintain thermal management within the -40°C to +150°C operational range.

Part Context

This part belongs to Ampleon's BLC series of LDMOS transistors, specifically engineered for high-efficiency RF power amplification. The XS variant typically denotes optimized performance characteristics for modern cellular infrastructure. It serves as a critical active component in linear amplifier stages where linearity and power density are paramount.

Replacement Considerations

Consult Ampleon's cross-reference guides for direct equivalents. Verify pinout compatibility with SOT1275-1-7 packages. Ensure electrical parameters such as Vds, Pout, and frequency range match or exceed original design requirements.

BLC10G18XS-301AVTYZBLC10G18XS-301AVTYZ
$38.22
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