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The BLC10G18XS-301AVTZ is a 300 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1880 MHz frequency range. It features a dual N-channel configuration with a drain-source breakdown voltage of 65 V and gate-source voltages ranging from -6 V to +9 V. The device operates within a case temperature range of -40 °C to +150 °C and utilizes an SOT1275-1 air cavity plastic earless flanged package. Typical performance at Tcase = 25 °C includes a power gain of 15.6 dB, drain efficiency of 52%, and adjacent channel power ratio of -30 dBc under 1-carrier W-CDMA test conditions.
Verify the specific ordering suffix against official Ampleon documentation to confirm packaging format and reel specifications. Confirm RoHS compliance status via the manufacturer's product details page prior to procurement. Ensure handling procedures adhere to ESD sensitivity classifications C2A and HBM Class 2 as defined in the datasheet.
Select this component for asymmetric Doherty amplifier architectures requiring high ruggedness and thermal stability. Evaluate impedance matching networks using the provided load-pull data for main and peak devices. Consider the internal matching and low output capacitance characteristics when designing for wideband multi-carrier signals.
This part belongs to the BLC10G18XS series of power LDMOS transistors manufactured by Ampleon. These components are engineered specifically for cellular infrastructure, offering optimized performance for modern digital modulation schemes. The series provides various power levels tailored for different base station deployment scenarios.
Consult official Ampleon substitution guides for verified replacements. Cross-referencing requires matching package type, pinout, and electrical characteristics such as breakdown voltage and thermal resistance.