BLC10G18XS-360AVTZ

BLC10G18XS-360AVTZ

$67.32
  • Description:RF MOSFET LDMOS SOT1258-7
  • Series:-

SKU:18509b3a68a9 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS SOT1258-7
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 1.88GHz
  • Gain:18dB
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1258-7
  • Supplier Device Package:SOT-1258-7
  • Configuration:-

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BLC10G18XS-360AVTZ

Overview

The BLC10G18XS-360AVTZ is a 360 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1880 MHz frequency range. It features a dual N-channel configuration with a drain-source breakdown voltage of 65 V and operates within a case temperature range of -40 °C to +125 °C. The device utilizes an SOT1258-4 air cavity plastic earless flanged package. Typical RF performance at VDS = 28 V includes a power gain of 17.0 dB, drain efficiency of 50.5%, and adjacent channel power ratio of -29.5 dBc under 1-carrier W-CDMA test conditions.

Feature Summary

  • Designed for low memory effects to provide excellent digital pre-distortion capability
  • Features lower output capacitance to improve performance in Doherty applications
  • Internally matched structure for ease of circuit integration
  • Integrated ESD protection compliant with CDM Class 3 and HBM Class 2 standards

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 1805 MHz to 1880 MHz frequency range
  • Asymmetrical Doherty amplifier designs

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging format and handling requirements. Ensure that the procurement source provides valid traceability and authenticity guarantees for sensitive RF semiconductor components. Confirm compliance with RoHS Directive 2002/95/EC restrictions on hazardous substances prior to final acquisition.

Selection Notes

Select this component for high-efficiency Doherty architectures requiring robust ruggedness against load mismatches up to 10:1 VSWR. Evaluate thermal resistance characteristics relative to the specific heatsink design to maintain junction temperatures within safe operating limits. Consider the internal matching network when designing input and output impedance circuits for optimal power transfer and stability.

Part Context

This part belongs to the BLC10G18XS series of power LDMOS transistors manufactured by Ampleon. The series targets cellular infrastructure markets, specifically offering variants optimized for different power levels and frequency bands within the 1800 MHz spectrum. The device represents a mature technology platform focused on balancing linearity, efficiency, and thermal management for modern multi-standard base station deployments.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalents. Cross-referencing requires matching pinout configurations, electrical ratings, and thermal specifications to ensure functional compatibility without redesigning the host application circuitry.

BLC10G18XS-360AVTZBLC10G18XS-360AVTZ
$67.32
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