BLC10G18XS-400AVTY

Overview

The BLC10G18XS-400AVT is a 400 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1880 MHz frequency range. It features a dual N-channel architecture with a drain-source breakdown voltage of 65 V and operates within a case temperature range of -40 °C to +125 °C. The device utilizes an SOT1258-4 air cavity plastic earless flanged package. Typical performance at VDS = 28 V includes a power gain of 16.5 dB, drain efficiency of 49.0%, and ACPR of -29.7 dBc under 1-carrier W-CDMA conditions.

Feature Summary

• Designed for low memory effects to provide excellent digital pre-distortion capability
• Internally matched structure for ease of integration into amplifier circuits
• Lower output capacitance optimized for improved performance in Doherty configurations
• Integrated ESD protection compliant with CDM Class 3 and HBM Class 2 standards

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 1805 MHz to 1880 MHz frequency range
• Asymmetrical Doherty amplifier designs

Procurement Notes

Verify component authenticity by cross-referencing the part number against official Ampleon documentation. Ensure handling procedures strictly adhere to ESD sensitivity guidelines specified in the datasheet. Confirm that the procurement source provides valid traceability records and that the product meets RoHS compliance requirements as defined by the manufacturer.

Selection Notes

Select this component for high-efficiency Doherty PA designs requiring robust ruggedness against load mismatches up to 10:1 VSWR. Evaluate thermal resistance characteristics to ensure adequate heat dissipation for the target application. Verify impedance matching networks align with the typical load-pull data provided for both main and peak devices at the specific operating frequency.

Part Context

This device belongs to the BLC10G18XS series of power LDMOS transistors manufactured by Ampleon. It is specifically engineered for wireless communication infrastructure, offering high linearity and efficiency. The part integrates main and peak amplifier sections on a single substrate to facilitate compact and high-performance asymmetric Doherty amplifier implementations.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other RF MOSFETs without validating pinout compatibility, electrical parameters, and thermal characteristics against the original design specifications.