BLC10G18XS-400AVTZ

BLC10G18XS-400AVTZ

$51.20
  • Description:RF MOSFET LDMOS 32V SOT1258-4
  • Series:-

SKU:da07372b6289 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT1258-4
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 1.88GHz
  • Gain:15.7dB
  • Voltage - Test:32 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:800 mA
  • Power - Output:400W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1258-4
  • Supplier Device Package:SOT1258-4
  • Configuration:Dual, Common Source

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BLC10G18XS-400AVTZ

Overview

The BLC10G18XS-400AVTZ is a dual N-channel LDMOS power transistor designed for base station applications in the 1805 MHz to 1880 MHz frequency range. It features a drain-source breakdown voltage of 65 V and operates within a case temperature range of -40 °C to +125 °C. The device utilizes an SOT1258-4 air cavity plastic earless flanged package with six leads. Typical performance at VDS = 28 V includes a power gain of 15.7 dB, drain efficiency of 49%, and adjacent channel power ratio of -28 dBc under 1-carrier W-CDMA conditions.

Feature Summary

  • Optimized for asymmetrical Doherty amplifier configurations with low output capacitance
  • Internally matched structure simplifies circuit design and integration
  • Integrated electrostatic discharge protection enhances component reliability
  • Low thermal resistance ensures stable operation under high power loads

Applications

  • RF power amplifiers for cellular base stations
  • Multi-carrier applications in the 1805 MHz to 1880 MHz band
  • Asymmetrical Doherty power amplifier designs

Procurement Notes

Verify the specific suffix against official documentation to confirm packaging format. The 'Z' suffix typically indicates tray packaging, while other variants may use reels. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure handling procedures meet ESD sensitivity requirements specified in the datasheet.

Selection Notes

Select this component for high-efficiency Doherty architectures requiring robust ruggedness. Verify impedance matching networks against the provided load-pull data tables for optimal power and efficiency. Ensure the cooling solution maintains the case temperature within the specified operating limits to preserve device longevity and performance stability.

Part Context

This part belongs to Ampleon's BLC10G18XS series of RF MOSFETs. These transistors are engineered specifically for wireless infrastructure. The series offers various power levels tailored for different frequency bands and modulation schemes used in modern telecommunications networks.

Replacement Considerations

BLC10G18XS-400AVT

BLC10G18XS-400AVTZBLC10G18XS-400AVTZ
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