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The BLC10G18XS-400AVTZ is a dual N-channel LDMOS power transistor designed for base station applications in the 1805 MHz to 1880 MHz frequency range. It features a drain-source breakdown voltage of 65 V and operates within a case temperature range of -40 °C to +125 °C. The device utilizes an SOT1258-4 air cavity plastic earless flanged package with six leads. Typical performance at VDS = 28 V includes a power gain of 15.7 dB, drain efficiency of 49%, and adjacent channel power ratio of -28 dBc under 1-carrier W-CDMA conditions.
Verify the specific suffix against official documentation to confirm packaging format. The 'Z' suffix typically indicates tray packaging, while other variants may use reels. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure handling procedures meet ESD sensitivity requirements specified in the datasheet.
Select this component for high-efficiency Doherty architectures requiring robust ruggedness. Verify impedance matching networks against the provided load-pull data tables for optimal power and efficiency. Ensure the cooling solution maintains the case temperature within the specified operating limits to preserve device longevity and performance stability.
This part belongs to Ampleon's BLC10G18XS series of RF MOSFETs. These transistors are engineered specifically for wireless infrastructure. The series offers various power levels tailored for different frequency bands and modulation schemes used in modern telecommunications networks.
BLC10G18XS-400AVT