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The BLC10G18XS-550AVT is a 550 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1880 MHz frequency range. It features a drain-source breakdown voltage of 65 V and operates with a case temperature range from -40 °C to +125 °C. The device utilizes an SOT1258-4 air cavity plastic earless flanged package with six leads. Typical performance at Tcase = 25 °C includes a power gain of 16.5 dB, drain efficiency of 49.3%, and ACPR of -29.4 dBc under 1-carrier W-CDMA test conditions.
Verify component authenticity through authorized Ampleon distribution channels. Confirm RoHS compliance status prior to integration. Ensure handling procedures adhere to CDM Class 3 and HBM Class 2 electrostatic discharge sensitivity guidelines during storage and assembly processes.
Evaluate thermal resistance characteristics against system heat dissipation requirements. Verify impedance matching networks align with specified load-pull data for main and peak devices. Confirm operating conditions remain within absolute maximum ratings for gate-source voltage and junction temperature limits.
This component belongs to the BLC10G18XS series of LDMOS transistors manufactured by Ampleon. These devices are engineered specifically for high-efficiency RF power amplification in wireless communication infrastructure, utilizing advanced packaging technologies to optimize thermal management and electrical performance.
Consult official Ampleon documentation for verified substitute part numbers. Cross-referencing requires matching package type, pin configuration, and electrical specifications to ensure functional compatibility without design modification.