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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLC10G18XS-551AVTZ is a 550 W LDMOS asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. It features dual N-channel architecture with VDS of 65 V and RDS(on) ranging from 37 mΩ to 108 mΩ. The device operates within -40 °C to +125 °C case temperature limits, delivering typical gain of 16.1 dB and drain efficiency up to 50% under 1-carrier W-CDMA conditions. Packaged in SOT1258-4 air cavity plastic earless flanged format, it integrates ESD protection and internal matching.
Verify the specific ordering suffix against the manufacturer's current catalog to confirm packaging type and availability status. Confirm RoHS compliance details directly on the official Ampleon website as referenced in the product data sheet. Ensure that the procurement channel provides valid traceability documentation for this RF MOSFET component.
Select this component for asymmetric Doherty amplifier designs requiring high ruggedness and low thermal resistance. Verify impedance matching networks against the provided load-pull data tables for both main and peak devices. Ensure the application environment supports the specified junction temperature limits and ESD handling precautions during assembly.
This part belongs to the BLC10G18XS series of power LDMOS transistors manufactured by Ampleon. It is specifically engineered for wireless communication infrastructure operating in the 1805 MHz to 1880 MHz band. The device utilizes an air cavity plastic earless flanged package to optimize thermal dissipation and electrical performance for demanding base station environments.
Public confirmed substitute part numbers are not available in the provided documentation.