BLC10G18XS-551AVTZ

BLC10G18XS-551AVTZ

$65.84
  • Description:RF MOSFET LDMOS 32V SOT1258-4
  • Series:-

SKU:2c36d51a4869 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT1258-4
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 1.88GHz
  • Gain:16.1dB
  • Voltage - Test:32 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:750 mA
  • Power - Output:550W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1258-4
  • Supplier Device Package:SOT1258-4
  • Configuration:Dual, Common Source

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BLC10G18XS-551AVTZ

Overview

The BLC10G18XS-551AVTZ is a 550 W LDMOS asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. It features dual N-channel architecture with VDS of 65 V and RDS(on) ranging from 37 mΩ to 108 mΩ. The device operates within -40 °C to +125 °C case temperature limits, delivering typical gain of 16.1 dB and drain efficiency up to 50% under 1-carrier W-CDMA conditions. Packaged in SOT1258-4 air cavity plastic earless flanged format, it integrates ESD protection and internal matching.

Feature Summary

  • Designed for low memory effects providing excellent digital pre-distortion capability
  • Lower output capacitance for improved performance in Doherty applications
  • Low thermal resistance providing excellent thermal stability
  • Internally matched for ease of use

Applications

  • RF power amplifiers for base stations
  • Multi carrier applications in the 1805 MHz to 1880 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm packaging type and availability status. Confirm RoHS compliance details directly on the official Ampleon website as referenced in the product data sheet. Ensure that the procurement channel provides valid traceability documentation for this RF MOSFET component.

Selection Notes

Select this component for asymmetric Doherty amplifier designs requiring high ruggedness and low thermal resistance. Verify impedance matching networks against the provided load-pull data tables for both main and peak devices. Ensure the application environment supports the specified junction temperature limits and ESD handling precautions during assembly.

Part Context

This part belongs to the BLC10G18XS series of power LDMOS transistors manufactured by Ampleon. It is specifically engineered for wireless communication infrastructure operating in the 1805 MHz to 1880 MHz band. The device utilizes an air cavity plastic earless flanged package to optimize thermal dissipation and electrical performance for demanding base station environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

BLC10G18XS-551AVTZBLC10G18XS-551AVTZ
$65.84
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