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The Ampleon BLC10G18XS-552AVTY is a dual N-channel LDMOS RF MOSFET transistor designed for high-power radio frequency applications. It operates within the 1.805 GHz to 1.88 GHz frequency range, delivering a rated output power of 550 W with a typical gain of 16.1 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and on-resistances of 62 mOhms and 108 mOhms. Packaged in an SOT1258-4-7 surface-mount format, it supports operation between -40°C and +125°C, ensuring reliability in demanding environments.
Verify component authenticity through authorized Ampleon distributors or certified suppliers. Confirm RoHS compliance status and moisture sensitivity levels prior to assembly. Ensure storage conditions adhere to humidity specifications to prevent package degradation. Validate part markings against official datasheet identifiers to avoid counterfeit components.
Select this component for designs requiring 550 W output power in the 1.8–1.9 GHz band. Evaluate thermal management requirements given the +125°C maximum junction temperature limit. Compare on-resistance values against circuit efficiency targets. Ensure PCB layout accommodates the SOT1258-4-7 footprint and grounding requirements for optimal RF performance.
This device belongs to the Ampleon BLC10G18XS series of LDMOS transistors. It shares the same core technology and frequency range as lower-power variants like the BLC10G18XS-301AVTY but offers higher output power. The series is engineered for robustness in wireless communication infrastructure, providing a scalable solution for different power amplifier stages.
Direct substitutes are not explicitly listed in public documentation. Consider evaluating other Ampleon models within the BLC10G18XS family for pin-compatible alternatives with adjusted power ratings. Verify electrical parameter compatibility before attempting cross-referencing with non-Ampleon devices.