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The BLC10G18XS-552AVTZ is a dual N-channel LDMOS RF MOSFET transistor manufactured by Ampleon. Designed for operation within the 1.805 GHz to 1.88 GHz frequency range, this component delivers a rated output power of 550 W with a typical gain of 16.1 dB. It features a drain-source breakdown voltage (Vds) of 65 V and on-resistances of 62 mOhms and 108 mOhms. The device operates in surface-mount SOT1258-4-7 packages and supports a temperature range from -40°C to +125°C.
Verify the specific suffix 'Z' against official Ampleon documentation to confirm RoHS compliance status or packaging variations. Ensure compatibility with SOT1258-4-7 footprints during procurement planning. Cross-reference datasheet revisions to validate electrical parameters before finalizing supply chain agreements.
Select this component when designing amplifiers for the 1.8 GHz band requiring 550 W output. Compare the 62 mOhm on-resistance against system thermal requirements. Verify that the 65 V drain voltage aligns with the power supply design. Confirm the dual-channel configuration meets the circuit topology needs.
This part belongs to the BLC10G18XS series of high-power LDMOS transistors. It shares the core 65 V technology with variants like the BLC10G18XS-301AVTY but offers higher power density. The SOT1258 package distinguishes it from lower-power counterparts using smaller form factors.
Direct substitutes include the BLC10G18XS-552AVTY. Verify pinout and thermal pad configurations match the existing PCB layout. Electrical parameters such as gain and output power should be compared directly.