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The BLC10G19LS-250WT is a 250 W LDMOS power transistor designed for base station applications operating between 1930 MHz and 1990 MHz. In a typical class-AB demo application at Tcase = 25 °C with a 2-carrier W-CDMA test signal, the device delivers an average output power of 60 W with a drain efficiency of 31% and a power gain of 19.3 dB. The limiting values specify a maximum drain-source voltage of 65 V and a junction temperature of 225 °C. Thermal resistance from junction to case is typically 0.28 K/W.
Verify the specific revision status against the latest Ampleon documentation before design finalization. Confirm that the SOT1271-2 package dimensions align with your PCB footprint requirements. Ensure ESD handling protocols are strictly followed during assembly due to the component's sensitivity classification.
Select this component for wideband code division multiple access systems requiring high linearity and efficiency. Verify that the cooling solution can maintain the case temperature within specified limits to ensure reliability. Check impedance matching networks against the provided load-pull data for optimal performance across the target frequency band.
This part belongs to the BLC series of power LDMOS transistors manufactured by Ampleon. It utilizes an air cavity plastic earless flanged package (SOT1271-2) which facilitates efficient heat dissipation through the flange connection. The device integrates internal matching networks to simplify circuit implementation.
Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models without reviewing specific electrical characteristics and pin configurations.