BLC10G19XS-551AVYZ

Overview

The BLC10G19XS-551AVYZ is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. It operates within the frequency range of 1.93 GHz to 2 GHz, delivering an output power of 570 W with a gain of 15 dB. The device is rated for a supply voltage of 30 V and features a drain-source breakdown voltage of 65 V. It utilizes an SOT1258-5 surface-mount package and supports a test current of 370 mA. The component functions reliably across a temperature range from -40 °C to +125 °C.

Feature Summary

• Dual N-channel common source configuration for high-power RF applications
• LDMOS technology optimized for efficiency and linearity in cellular base stations
• Robust thermal performance supporting operation up to 125 °C

Applications

• Cellular base station power amplifiers
• Broadband RF power amplification
• Wireless communication infrastructure

Procurement Notes

Verify the specific suffix AVYZ against official Ampleon documentation to confirm exact electrical characteristics and packaging type. Ensure compatibility with SOT1258-5 footprints during integration. Confirm RoHS compliance status through the manufacturer's latest datasheet before procurement.

Selection Notes

Select this component for applications requiring high output power at 2 GHz frequencies. Consider the 30 V rating and 570 W output capability when designing matching networks. Evaluate thermal management requirements due to the high power density inherent in LDMOS devices within the SOT1258-5 package.

Part Context

This part belongs to the BLC10 series of LDMOS transistors designed for demanding RF environments. It complements other Ampleon devices offering similar power levels but may differ in voltage ratings or package configurations. The series targets modern wireless infrastructure needs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult Ampleon directly for qualified alternatives.