BLC10G19XS-551AVZ

Overview

The BLC10G19XS-551AV is a 550 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1930 MHz to 2000 MHz frequency range. It features a drain-source breakdown voltage of 65 V and operates with a maximum case temperature of +150 °C. The device delivers typical power gain of 15 dB and drain efficiency of 50.5% under 1-carrier W-CDMA conditions at VDS = 30 V. It utilizes an SOT1258-5 air cavity plastic earless flanged package with six leads.

Feature Summary

• Optimized for low memory effects to support excellent digital pre-distortion capability
• Lower output capacitance improves performance specifically in Doherty amplifier configurations
• Internally matched structure simplifies circuit integration and design
• Integrated ESD protection ensures robustness against electrostatic discharge events

Applications

• RF power amplifiers for base stations operating between 1930 MHz and 2000 MHz
• Multi-carrier applications utilizing asymmetrical Doherty architectures
• W-CDMA signal processing requiring high linearity and efficiency

Procurement Notes

Verify component authenticity through authorized Ampleon distribution channels. Confirm RoHS compliance status via official product details. Ensure handling procedures adhere to CDM Class C2A and HBM Class 2 standards to prevent electrostatic damage during assembly and testing processes.

Selection Notes

Select this component for designs requiring high ruggedness under load mismatch conditions, supporting VSWR up to 10:1. Evaluate thermal resistance characteristics relative to the specific heat sink configuration. Ensure the application environment supports the specified junction and case temperature limits for reliable long-term operation.

Part Context

This part belongs to the BLC10G19XS series of power LDMOS transistors manufactured by Ampleon. It is engineered specifically for wireless infrastructure, targeting the PCS band frequencies. The device integrates main and peak amplifier sections within a single package to facilitate efficient Doherty implementation.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters, pin configurations, and thermal characteristics to ensure functional compatibility without redesigning the host circuitry.

FAQ

What is the maximum load mismatch the device can withstand?

The BLC10G19XS-551AV can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified operating conditions.

What is the recommended test signal for evaluating ACPR?

Performance is typically evaluated using a 1-carrier W-CDMA signal with 3GPP test model 1, 64 DPCH, and a PAR of 7.2 dB at 0.01% probability on CCDF.

How is the gate-source quiescent voltage defined for the main device?

For the main device, the gate-source quiescent voltage (VGSq) is typically 2.0 V when VDS = 32 V and ID = 370 mA.