BLC10G19XS-601AVTY

Overview

The BLC10G19XS-601AVT is a 600 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1930 MHz to 1995 MHz frequency range. It features a dual N-channel configuration with a drain-source breakdown voltage of 65 V and operates within a case temperature range of -40 °C to +125 °C. Typical performance at Tcase = 25 °C includes a power gain of 15.5 dB, drain efficiency of 48.5%, and an adjacent channel power ratio (ACPR) of -34 dBc under 1-carrier W-CDMA test conditions. The device utilizes an SOT1258-4 air cavity plastic earless flanged package.

Feature Summary

• Designed for low memory effects and minimum quiescent current drift to support excellent digital pre-distortion capability.
• Features lower output capacitance to improve performance specifically in Doherty amplifier configurations.
• Internally matched architecture simplifies circuit integration and reduces design complexity.
• Integrated electrostatic discharge protection enhances component reliability during handling.

Applications

• RF power amplifiers for base stations operating in the 1930 MHz to 1995 MHz band
• Multi-carrier applications requiring high linearity and efficiency
• Asymmetric Doherty power amplifier designs

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status directly through Ampleon product details before finalizing procurement orders. Ensure that all handling procedures adhere to ESD sensitivity classifications C3 and HBM Class 2 as defined in the datasheet to prevent device degradation.

Selection Notes

Select this component for designs requiring high ruggedness under load mismatch conditions, supporting VSWR up to 10:1. Evaluate thermal resistance characteristics relative to the expected power dissipation levels. Consider the internal matching network when designing input and output impedance circuits. Verify compatibility with the intended modulation schemes, such as W-CDMA or LTE, regarding linearity requirements.

Part Context

This part belongs to the BLC10G series of LDMOS transistors manufactured by Ampleon. It is engineered specifically for telecommunications infrastructure, focusing on high power density and efficiency in multi-carrier environments. The device represents a specialized solution for modern base station architectures utilizing Doherty topology.

Replacement Considerations

Consult the official Ampleon portfolio for direct replacements or upgrades within the BLC10G series. Verify pinout compatibility and thermal interface dimensions when substituting components. Cross-reference electrical parameters to ensure equivalent performance in the target application.

FAQ

What is the maximum load mismatch the device can withstand?

The BLC10G19XS-601AVT can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

What is the recommended package type for this transistor?

The device is housed in an SOT1258-4 air cavity plastic earless flanged package with six leads.

How does the device handle electrostatic discharge?

The component includes integrated ESD protection and is classified as C3 for Charged Device Model and Class 2 for Human Body Model.