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The BLC10G19XS-601AVTZ is a dual N-channel LDMOS RF MOSFET transistor manufactured by Ampleon. Designed for high-power applications, it operates within the 1.805 GHz to 1.88 GHz frequency range. Key electrical parameters include a drain-source breakdown voltage (Vds) of 65 V and an on-resistance (Rds(on)) of 47.2 mOhms per channel. The device delivers a typical output power of 600 W with a gain of 16 dB. It supports surface mount installation in an SOT1258-4-7 package and functions reliably across a temperature range of -40°C to +125°C.
Verify component authenticity through authorized Ampleon distributors or certified suppliers. Confirm RoHS compliance status and check for specific ordering suffixes that may indicate packaging variations. Request original manufacturer datasheets to validate technical specifications before integration into production designs.
Select this component for applications requiring 600 W output power at 1.8 GHz frequencies. Ensure the design accommodates the SOT1258-4-7 package dimensions and thermal requirements. Compare Rds(on) values against alternative models to optimize efficiency for specific bias conditions and duty cycles.
This part belongs to the BLC10G19XS series of high-power LDMOS transistors from Ampleon. The series targets demanding RF power applications where reliability and linearity are critical. It complements other variants in the lineup offering different power levels or frequency optimizations for diverse wireless infrastructure needs.
Direct substitutes include BLC10G19XS-601AVTY, which shares identical electrical characteristics but utilizes reel packaging instead of trays. Verify pinout compatibility and thermal pad configurations when transitioning between packaging types.