BLC10G19XS-601AVTZ

BLC10G19XS-601AVTZ

$118.13
  • Description:RF MOSFET LDMOS 30V SOT1258-4
  • Series:-

SKU:ae9390b8eac4 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V SOT1258-4
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS (Dual), Common Source
  • Frequency:1.93GHz ~ 1.995GHz
  • Gain:15dB
  • Voltage - Test:30 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:1.06 A
  • Power - Output:600W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1258-4
  • Supplier Device Package:SOT1258-4
  • Configuration:2 N-Channel (Dual) Common Source

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BLC10G19XS-601AVTZ

Overview

The BLC10G19XS-601AVTZ is a dual N-channel LDMOS RF MOSFET transistor manufactured by Ampleon. Designed for high-power applications, it operates within the 1.805 GHz to 1.88 GHz frequency range. Key electrical parameters include a drain-source breakdown voltage (Vds) of 65 V and an on-resistance (Rds(on)) of 47.2 mOhms per channel. The device delivers a typical output power of 600 W with a gain of 16 dB. It supports surface mount installation in an SOT1258-4-7 package and functions reliably across a temperature range of -40°C to +125°C.

Feature Summary

  • Dual N-channel LDMOS architecture providing high power density
  • Optimized for cellular base station infrastructure efficiency
  • Robust thermal performance supporting high power operation

Applications

  • Cellular base station power amplifiers
  • Broadband RF power amplification
  • Wireless communication infrastructure

Procurement Notes

Verify component authenticity through authorized Ampleon distributors or certified suppliers. Confirm RoHS compliance status and check for specific ordering suffixes that may indicate packaging variations. Request original manufacturer datasheets to validate technical specifications before integration into production designs.

Selection Notes

Select this component for applications requiring 600 W output power at 1.8 GHz frequencies. Ensure the design accommodates the SOT1258-4-7 package dimensions and thermal requirements. Compare Rds(on) values against alternative models to optimize efficiency for specific bias conditions and duty cycles.

Part Context

This part belongs to the BLC10G19XS series of high-power LDMOS transistors from Ampleon. The series targets demanding RF power applications where reliability and linearity are critical. It complements other variants in the lineup offering different power levels or frequency optimizations for diverse wireless infrastructure needs.

Replacement Considerations

Direct substitutes include BLC10G19XS-601AVTY, which shares identical electrical characteristics but utilizes reel packaging instead of trays. Verify pinout compatibility and thermal pad configurations when transitioning between packaging types.

BLC10G19XS-601AVTZBLC10G19XS-601AVTZ
$118.13
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