BLC10G22LS-240PVTY

BLC10G22LS-240PVTY

$58.30
  • Description:RF MOSFET LDMOS 28V SOT1275-3
  • Series:-

SKU:8fa504f7ee3b Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT1275-3
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.2GHz
  • Gain:19.7dB
  • Voltage - Test:28 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:1.6 A
  • Power - Output:60W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT1275-3
  • Supplier Device Package:SOT1275-3
  • Configuration:-

Download product information

BLC10G22LS-240PVTY

Overview

The BLC10G22LS-240PVT is a 240 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2200 MHz frequency range. It features enhanced video bandwidth and internal matching. Typical performance at VDS = 28 V, IDq = 1600 mA, and Tcase = 25 °C includes a drain efficiency of 30% and power gain of 19.7 dB with a 2-carrier W-CDMA signal. The device has a drain-source breakdown voltage of 65 V and operates up to a junction temperature of 225 °C. It utilizes an SOT1275-1 air cavity plastic earless flanged package.

Feature Summary

  • Enhanced video bandwidth enabling full band operation
  • Internally matched for ease of use
  • Integrated ESD protection compliant with C2A and HBM Class 2 standards
  • Low thermal resistance providing excellent thermal stability

Applications

  • RF power amplifiers for base stations
  • Multi carrier applications in the 2110 MHz to 2200 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and RoHS compliance status. Confirm that the required test circuit components match the Rogers RO4350B specifications provided in the datasheet for accurate performance validation during procurement planning.

Selection Notes

Select this component for wideband base station designs requiring high ruggedness and low memory effects. Ensure the design supports the specified 28 V drain supply and 1600 mA quiescent current. Verify that the application environment allows for adequate heat sinking to maintain the case temperature within the recommended limits for optimal efficiency.

Part Context

This part belongs to Ampleon's BLC10G22 series of LDMOS power transistors. It is specifically engineered for cellular infrastructure, offering a balance of high output power and linearity. The device is suitable for modern modulation schemes requiring wide video bandwidth to minimize distortion in multi-carrier environments.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalents. Do not assume pin compatibility or electrical equivalence with other LDMOS families without explicit manufacturer confirmation.

BLC10G22LS-240PVTYBLC10G22LS-240PVTY
$58.30
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