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The BLC10G22LS-240PVT is a 240 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2200 MHz frequency range. It features enhanced video bandwidth and internal matching. Typical performance at VDS = 28 V, IDq = 1600 mA, and Tcase = 25 °C includes a drain efficiency of 30% and power gain of 19.7 dB with a 2-carrier W-CDMA signal. The device has a drain-source breakdown voltage of 65 V and operates up to a junction temperature of 225 °C. It utilizes an SOT1275-1 air cavity plastic earless flanged package.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and RoHS compliance status. Confirm that the required test circuit components match the Rogers RO4350B specifications provided in the datasheet for accurate performance validation during procurement planning.
Select this component for wideband base station designs requiring high ruggedness and low memory effects. Ensure the design supports the specified 28 V drain supply and 1600 mA quiescent current. Verify that the application environment allows for adequate heat sinking to maintain the case temperature within the recommended limits for optimal efficiency.
This part belongs to Ampleon's BLC10G22 series of LDMOS power transistors. It is specifically engineered for cellular infrastructure, offering a balance of high output power and linearity. The device is suitable for modern modulation schemes requiring wide video bandwidth to minimize distortion in multi-carrier environments.
Consult official Ampleon substitution guides for verified equivalents. Do not assume pin compatibility or electrical equivalence with other LDMOS families without explicit manufacturer confirmation.