BLC10G22LS-240PVTZ

BLC10G22LS-240PVTZ

  • Description:RF MOSFET LDMOS 28V SOT1275-3
  • Series:-

SKU:9b106dffd330 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT1275-3
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.2GHz
  • Gain:19.7dB
  • Voltage - Test:28 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:1.6 A
  • Power - Output:60W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-3
  • Supplier Device Package:SOT-1275-3
  • Configuration:-

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BLC10G22LS-240PVTZ

Overview

The BLC10G22LS-240PVT is a 240 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2200 MHz frequency range. It features enhanced video bandwidth and internal matching for ease of use. Typical RF performance at VDS = 28 V, IDq = 1600 mA, and Tcase = 25 °C includes a power gain of 19.7 dB, drain efficiency of 30%, and ACPR5M of -30 dBc with a 2-carrier W-CDMA signal. The device operates with a maximum drain-source voltage of 65 V and junction temperature up to 225 °C. It utilizes an air cavity plastic earless flanged package (SOT1275-1) with six leads.

Feature Summary

  • Excellent ruggedness capable of withstanding high load mismatch conditions
  • Enhanced video bandwidth enabling full band operation
  • Low thermal resistance providing excellent thermal stability
  • Designed for low memory effects to support pre-distortion

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 2110 MHz to 2200 MHz range

Procurement Notes

Verify component authenticity by checking the manufacturer's official documentation against the part marking on the device. Ensure the ordering suffix matches the specific package version SOT1275-1. Confirm RoHS compliance status if required for your assembly process. Always refer to the latest product data sheet for any updates to specifications or handling instructions before placing orders.

Selection Notes

Select this component for wideband base station amplifier designs requiring high linearity and efficiency in the 2110–2200 MHz band. Consider the internal matching network which simplifies circuit design. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the application supports the necessary gate-source biasing and drain voltage levels defined in the limiting values.

Part Context

This LDMOS transistor belongs to Ampleon's portfolio of power devices optimized for telecommunications infrastructure. It is specifically engineered to meet the demands of modern multi-carrier systems like W-CDMA. The device integrates ESD protection and is compliant with hazardous substance restrictions. Its design focuses on balancing high output power with linear performance characteristics essential for digital modulation schemes.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

BLC10G22LS-240PVTZBLC10G22LS-240PVTZ

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