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The BLC10G22XS-400AVT is a 400 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2110 MHz to 2200 MHz frequency range. It features a dual N-channel configuration with a drain-source breakdown voltage of 65 V and operates within a case temperature range of -40 °C to +125 °C. The device utilizes an SOT1258-4 air cavity plastic earless flanged package. Typical performance at Tcase = 25 °C includes a power gain of 17.0 dB, drain efficiency of 47.0%, and an adjacent channel power ratio of -29.6 dBc under 1-carrier W-CDMA test conditions.
Verify component authenticity by checking the manufacturer's official documentation against the specific part number BLC10G22XS-400AVT. Ensure that the ordering suffix matches the required package version SOT1258-4. Confirm RoHS compliance status through the manufacturer's product details page prior to procurement.
Select this component for asymmetric Doherty amplifier designs operating between 2110 MHz and 2200 MHz. Verify thermal management requirements as the junction temperature can reach up to 225 °C. Ensure the design accommodates the specified gate-source voltage limits and provides adequate impedance matching for both main and peak devices.
This device belongs to Ampleon's portfolio of RF power transistors utilizing LDMOS technology. It is specifically engineered for high-efficiency operation in cellular infrastructure. The product line focuses on delivering robust performance in multi-carrier environments while maintaining ruggedness against load mismatches typical in base station deployments.
Consult the manufacturer's official substitution guide for verified equivalent parts. Do not assume functional compatibility with other models sharing similar power ratings without verifying pinout, impedance, and thermal characteristics.