BLC10G22XS-551AVTZ

Overview

The BLC10G22XS-551AVTZ is a 550 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2100 MHz to 2200 MHz frequency range. It features a drain-source breakdown voltage of 65 V and operates with a case temperature range from -40 °C to +125 °C. In an asymmetrical Doherty test circuit at 32 V, it delivers typical average output powers of 90 W to 115 W with drain efficiencies between 49.8% and 50.5%. The device exhibits a power gain of approximately 15.9 dB to 16.3 dB and an adjacent channel power ratio (ACPR) of -28.5 dBc to -29.1 dBc under 1-carrier W-CDMA conditions.

Feature Summary

• Designed specifically for low memory effects to support excellent digital pre-distortion capability.
• Features lower output capacitance to improve performance in Doherty amplifier configurations.
• Internally matched structure simplifies integration into RF power amplifier designs.
• Integrated electrostatic discharge protection ensures enhanced ruggedness during operation.

Applications

• RF power amplifiers for cellular base stations
• Multi-carrier applications within the 2100 MHz to 2200 MHz band
• Asymmetric Doherty amplifier architectures

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm packaging variations. Confirm RoHS compliance status directly through manufacturer channels. Ensure handling procedures meet ESD sensitivity requirements specified in the datasheet. Validate thermal management solutions align with junction-to-case resistance limits. Cross-reference part numbers with authorized distributors to ensure authenticity.

Selection Notes

Evaluate the device's suitability for asymmetric Doherty topologies requiring high efficiency and linearity. Consider the internal matching network when designing input and output impedance circuits. Assess thermal dissipation capabilities based on the specified junction-to-case resistance values. Verify that the operating frequency range matches the target application spectrum. Review load-pull data to determine optimal source and load impedances for peak performance.

Part Context

This component belongs to the BLC10G22XS series of LDMOS transistors manufactured by Ampleon. These devices are engineered for high-power RF applications, specifically targeting the evolution of wireless communication infrastructure. The series utilizes advanced LDMOS technology to deliver robust performance in demanding base station environments.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalent parts. Do not assume functional compatibility with other LDMOS families without rigorous testing. Verify pinout and package dimensions match existing board layouts. Check if alternative parts offer comparable ruggedness and thermal characteristics.

FAQ

What is the maximum load mismatch the device can withstand?

The BLC10G22XS-551AVT can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

How is the gate-source quiescent voltage defined for the main device?

For the main device, the typical gate-source quiescent voltage is 2.2 V when measured at a drain-source voltage of 32 V and a drain current of 800 mA.

What ESD classification does this component hold?

The device holds a Charged Device Model (CDM) classification of C3 and a Human Body Model (HBM) classification of 2.