BLC10G22XS-570AVTY

$72.71

Description：RF MOSFET LDMOS 30V SOT1258-4
Series：-

SKU:a7321c81e1ed Category: RF FETs, MOSFETs Brand: Ampleon USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 30V SOT1258-4
Series：-
Mfr：Ampleon USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS (Dual), Common Source
Frequency：2.11GHz ~ 2.18GHz
Gain：15.7dB
Voltage - Test：30 V
Current Rating (Amps)：2.8µA
Noise Figure：-
Current - Test：1.15 A
Power - Output：570W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SOT-1258-4
Supplier Device Package：SOT1258-4
Configuration：2 N-Channel (Dual) Common Source

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BLC10G22XS-570AVTY

Overview

The BLC10G22XS-570AVTY is a dual N-channel LDMOS RF MOSFET transistor manufactured by Ampleon. It operates within the frequency range of 2.11 GHz to 2.18 GHz. The device provides an output power of 570 W with a gain of 15.7 dB. Key electrical parameters include a drain-source breakdown voltage (Vds) of 65 V and a drain-source on-resistance (Rds(on)) of 65 mΩ. The component is designed for surface mount installation in SOT1258-4 packages. It supports operating temperatures from -40°C to +125°C.

Feature Summary

Utilizes LDMOS technology for high-frequency RF performance
Dual N-channel configuration for asymmetric Doherty applications
Optimized for base station power amplifier efficiency

Applications

Base station power amplifiers
Asymmetric Doherty power amplifier architectures
RF signal generation at 2.11–2.18 GHz

Procurement Notes

Verify the specific suffix AVTY against official Ampleon documentation to confirm packaging type and reel specifications. Ensure compatibility with SOT1258-4 footprints during integration. Cross-reference thermal management requirements with the datasheet's maximum junction temperature limits. Confirm RoHS compliance status through the manufacturer's current product declaration. Validate that the requested quantity matches the standard reel or cut-tape availability defined in the procurement catalog.

Selection Notes

Select this component for applications requiring 570 W output power in the 2.11–2.18 GHz band. Consider the 65 V breakdown voltage when designing bias circuits. Evaluate the 15.7 dB gain for system-level power budget calculations. Ensure the PCB layout supports the SOT1258-4 package thermal dissipation needs. Compare Rds(on) values against alternative devices if conduction loss is a critical design constraint.

Part Context

This part belongs to the BLC10G22XS series, which includes variants like the BLC10G22XS-400AVTZ. The series utilizes LDMOS technology for RF power amplification. The BLC10G22XS-570AVTY specifically targets higher power outputs compared to lower-wattage siblings in the same family. It is distinct from the BLC10G22XS-600AVT, which covers a slightly different frequency range up to 2.17 GHz.